High electron mobility transistor (hemt) fin field-effect transistor (finfet)
US-2020251582-A1 · Aug 6, 2020 · US
High electron mobility transistor and method for fabricating the same
US2023378314A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023378314-A1 |
| Application number | US-202318221404-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 13, 2023 |
| Priority date | Dec 6, 2019 |
| Publication date | Nov 23, 2023 |
| Grant date | — |
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- Title
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Abstract
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A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . A high electron mobility transistor (HEMT), comprising: a buffer layer on a substrate; a first barrier layer on the buffer layer; a p-type semiconductor layer on the first barrier layer; a hard mask on the p-type semiconductor layer; and a spacer adjacent to the p-type semiconductor layer. 2 . The HEMT of claim 1 , further comprising: a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode adjacent to two sides of the spacer. 3 . The HEMT of claim 2 , wherein the hard mask is between the p-type semiconductor layer and the gate electrode. 4 . The HEMT of claim 1 , wherein the hard mask comprises a conductive material. 5 . The HEMT of claim 1 , further comprising a second barrier layer adjacent to the spacer on the first barrier layer.
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Classifications
Nitride Group III-V materials, e.g. AlN or GaN · CPC title
using Group III-V semiconductor material · CPC title
- H10D30/015Primary
of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT · CPC title
comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title
Gate regions of field-effect devices having PN junction gates · CPC title
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Frequently asked questions
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- What does patent US2023378314A1 cover?
- A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/015. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Nov 23 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).