Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
Enhancement mode gallium nitride transistor with improved gate characteristics
US8969918B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969918-B2 |
| Application number | US-75694010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 8, 2010 |
| Priority date | Apr 8, 2009 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400 Å to 900 Å. In a preferred embodiment, the thickness is 600 Å.
First claim
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We claim: 1. An enhancement mode gallium nitride (GaN) transistor having a rated gate voltage of 5 volts, comprising: a p-type GaN gate structure with a thickness of 600 Å.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/4755Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8969918B2 cover?
- An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400 Å to 900 Å. In a preferred embodiment, the thickness is 600 Å.
- Who is the assignee on this patent?
- Lidow Alexander, Beach Robert, Nakata Alana, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/4755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).