Semiconductor device

Patent metadata

Field	Value
Publication number	US-10109727-B2
Application number	US-201515531015-A
Country	US
Kind code	B2
Filing date	Dec 8, 2015
Priority date	Dec 26, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a lateral switching device including:
a substrate formed of a semi-insulating material or a semiconductor material; a channel forming layer disposed on the substrate, the channel forming layer including a heterojunction structure made of a GaN layer and an AlGaN layer, the GaN layer forming an electron transit layer, the AlGaN layer forming an electron supply portion, the channel forming layer being formed with a recessed portion at which the AlGaN layer is partly removed;
a planar gate structure part including a gate insulating film disposed in the recessed portion contacting the GaN layer and a gate electrode disposed on the gate insulating film; and
a source electrode and a drain electrode disposed on opposite sides of the gate structure part, wherein
the lateral switching device induces a two-dimensional electron gas carrier in the GaN layer adjacent to an interface between the GaN layer and the AlGaN layer, and forms a channel in a top surface portion of the GaN layer at a bottom of the recessed portion, when the gate electrode is applied with a voltage, to allow a current to flow between the source electrode and the drain electrode,
the AlGaN layer is a two layer structure which includes:
a first AlGaN layer wherein an Al mixed crystal ratio of the first AlGaN layer determines a two-dimensional electron gas carrier density; and
a second AlGaN layer, wherein a value of an Al mixed crystal ratio of the second AlGaN layer determines a two-dimensional electron gas carrier density and is smaller than the Al mixed crystal ratio of the first AlGaN layer, such that the second AlGaN layer is configured to induce a negative fixed charge in a surface layer portion of the first AlGaN layer, and the Al mixed crystal ratio of the second AlGaN layer restricts generation of two-dimensional hole gas in the surface layer portion of the first AlGaN layer,
the value of the Al mixed crystal ratio of the second AlGaN layer is 0.05 or more and less than 0.25,
the source electrode and the drain electrode are directly located on the first AlGaN layer, and the second AlGaN layer is in contact with the gate structure part on both sides and is spaced from the source electrode and the drain electrode.

Assignees

• Denso Corp

Inventors

• Oyama Kazuhiro
• Higuchi Yasushi
• Oosawa Seigo
• Matsui Masaki
• Eum Youngshin

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H01L29/786

  Electricity · mapped topic

• H01L29/06

  Electricity · mapped topic

• H01L29/778 Primary

  Electricity · mapped topic

• H01L29/66462

  Electricity · mapped topic