Chemical mechanical polishing cleaning system with temperature control for defect reduction

Patent metadata

Field	Value
Publication number	US-2023326736-A1
Application number	US-202318334181-A
Country	US
Kind code	A1
Filing date	Jun 13, 2023
Priority date	Mar 2, 2020
Publication date	Oct 12, 2023
Grant date	—

Abstract

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

First claim

What is claimed is:

1 . A method for processing a substrate, comprising:
planarizing a surface of the substrate by a chemical mechanical polishing (CMP) process, the CMP process generating contaminants on the surface of the substrate; placing the substrate in a cleaning module; supplying a cleaning solution from a cleaning solution supply system to the cleaning module, wherein the cleaning solution supply system comprises a temperature control system, the temperature control system comprising: a heating device configured to heat the cleaning solution; a cooling device configured to cool the cleaning solution; a temperature sensor configured to monitor a temperature of the cleaning solution; and a temperature controller configured to control a temperature of the cleaning solution; monitoring a temperature of the cleaning solution; comparing the temperature of the cleaning solution with a target temperature that is determined based on types of the contaminants on the substrate; heating or cooling the cleaning solution until the target temperature is reached; and removing the contaminants from the surface of the substrate using the cleaning solution of the target temperature.

2 . The method of claim 1 , wherein heating the cleaning solution comprises heating the cleaning solution to a temperature from about 30° C. to about 100° C. using the heating device.

3 . The method of claim 1 , wherein cooling the cleaning solution comprises cooling the cleaning solution to a temperature from about −10° C. to about 10° C. using the cooling device.

4 . The method of claim 1 , wherein the temperature of the cleaning solution is monitored by the temperature sensor.

5 . The method of claim 1 , wherein the cleaning module comprises a megasonic cleaning module, the method comprising:
immersing the substrate into the cleaning solution of the target temperature; and supplying a megasonic energy to the cleaning solution to agitate the cleaning solution, thereby dislodging the contaminants from the surface of the substrate.

6 . The method of claim 5 , wherein the cleaning module comprises a pad-cleaning module, the method comprising:
spraying the cleaning solution of the target temperature to the surface of the substrate; and scrubbing the surface of the substrate using a cleaning pad to remove the contaminants from the surface of the substrate.

7 . The method of claim 6 , wherein the cleaning module comprises a brush-cleaning module, the method comprising:
spraying the cleaning solution of the target temperature to front side and backside surfaces of the substrate, wherein the surface of the substrate is the front side surface; and scrubbing the front side and backside surfaces of the substrate using a pair of brushes to remove the contaminants from the surface of the substrate.

8 . The method of claim 7 , further comprising:
transferring the substrate from the megasonic cleaning module to the pad-cleaning module after the substrate has been cleaned in the megasonic cleaning module; and transferring the substrate from the pad-cleaning module to the brush-cleaning module after the substrate has been cleaned in the pad-cleaning module.

9 . The method of claim 1 , further comprising transferring the substrate from the cleaning module to a drying module.

10 . The method of claim 9 , further comprising:
rinsing the substrate by water or isopropyl alcohol; and drying the substrate.

11 . A method for processing a substrate, comprising:
planarizing a surface of the substrate by a chemical mechanical polishing (CMP) process, the CMP process generating contaminants on the surface of the substrate; cleaning the substrate in a first cleaning module with a cleaning solution of a target temperature that is determined based on types of the contaminants on the substrate, wherein the first cleaning module is operated to remove the contaminants from the substrate using a megasonic acoustic energy; cleaning the substrate in a second cleaning module with the cleaning solution of the target temperature, wherein the second cleaning module is operated to remove the contaminants from the substrate by scrubbing a front side surface of the substrate using a cleaning pad; and cleaning the substrate in a third cleaning module with the cleaning solution of the target temperature, wherein the third cleaning module is operated to remove the contaminants from the substrate by simultaneously scrubbing the front side surface and a backside surface of the substrate using a pair of brushes, wherein the cleaning solution of the target temperature is supplied from a cleaning solution supply system comprising a temperature control system operated to produce the cleaning solution of the target temperature, the temperature control system comprising:
a heating device configured to heat the cleaning solution;
a cooling device configured to cool the cleaning solution;
a temperature sensor configured to monitor a temperature of the cleaning solution; and
a temperature controller configured to control a temperature of the cleaning solution; and
wherein producing the cleaning solution of the target temperature comprises:
monitoring a temperature of the cleaning solution;
comparing the temperature of the cleaning solution with a target temperature that is determined based on types of the contaminants on the substrate; and
heating or cooling the cleaning solution until the target temperature is reached.

12 . The method of claim 11 , further comprising preparing the cleaning solution, wherein preparing the cleaning solution comprises mixing a first cleaning fluid from a first tank and a second cleaning fluid from a second tank.

13 . The method of claim 12 , wherein the first cleaning fluid and the second cleaning fluid are mixed in a chemical mixer.

14 . The method of claim 12 , wherein the first cleaning fluid and the second cleaning fluid are mixed in the temperature control system.

15 . The method of claim 11 , wherein heating or cooling the cleaning solution comprises heating the cleaning solution to a temperature from about 30° C. to about 100° C. using the heating device.

16 . The method of claim 11 , wherein heating or cooling the cleaning solution comprises cooling the cleaning solution to a temperature from about −10° C. to about 10° C. using the cooling device.

17 . A method for processing a substrate, comprising:
performing a chemical mechanical polishing (CMP) process to planarize a surface of the substrate, the CMP process generating contaminants on the surface of the substrate; and performing a multi-stage cleaning process to remove the contaminants from the surface of the substrate, comprising: supply a first cleaning solution of a first temperature to a first cleaning module, the first cleaning module comprising a tank to hold a first cleaning solution therein, a holder configured to vertically support the substrate during cleaning, and a transducer configured to transmit a megasonic acoustic energy to the first cleaning solution to agitate the first cleaning solution performing a first cleaning process using the first cleaning module; supply a second cleaning solution of a second temperature to a second cleaning module, the second cleaning module comprising a platen configured to support the substrate, a cleaning pad configured to scrub a front side surface of the substrate, and a pair of first spray bars configured to spray a second cleaning solution to the front side surface and a backside surface of the substrate, respectively; performing

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ssutzu
• Chen Ying-Tsung
• Tsai Ya-Ting
• Huang Gin-Chen
• Chen Kei-Wei

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0412

  using mainly scrubbing means, e.g. brushes · CPC title

• H10P70/237 Primary

  the processing being a planarisation of insulating layers · CPC title