Method of processing a wafer

Patent metadata

Field	Value
Publication number	US-2023298881-A1
Application number	US-202218052032-A
Country	US
Kind code	A1
Filing date	Nov 2, 2022
Priority date	Nov 10, 2021
Publication date	Sep 21, 2023
Grant date	—

Abstract

Edge trimming is performed on a wafer while a cleaning liquid is supplied to the center of a face side of the wafer and the wafer is rotated to form a film of the cleaning liquid that covers the face side of the wafer. The film of the cleaning liquid prevents the face side of the wafer from being dried, lowering the probability that swarf will be introduced into devices on the face side of the wafer. In addition, the consumption of the cleaning liquid can be reduced compared with a step of performing edge trimming on the wafer while supplying a curtain of cleaning liquid to the entire face side of the wafer.

First claim

What is claimed is:

1 . A method of processing a wafer having a plurality of devices formed on a face side thereof and having a beveled outer circumferential edge portion, the method comprising:
a holding step of holding the wafer rotatably along circumferential directions thereof with the face side facing upwardly; and a processing step of, after the holding step, processing the outer circumferential edge portion of the wafer by, while a lower end portion of an annular cutting blade that is rotating is cutting into the outer circumferential edge portion of the wafer, supplying a cleaning liquid to a center of the face side of the wafer and rotating the wafer to form a film of the cleaning liquid that covers the face side of the wafer.

2 . The method of processing a wafer according to claim 1 , further comprising:
an ultraviolet ray applying step of, before the processing step, applying ultraviolet rays to the face side of the wafer to render the face side hydrophilic.

3 . The method of processing a wafer according to claim 1 , wherein
the processing step includes
a cutting step of increasing a depth by which the lower end portion of the rotating cutting blade cuts into the outer circumferential edge portion of the wafer from the face side, and
a rotating step of rotating the wafer in at least one revolution, and
the cutting step and the rotating step are alternately repeated.

4 . The method of processing a wafer according to claim 2 , wherein
the processing step includes
a cutting step of increasing a depth by which the lower end portion of the rotating cutting blade cuts into the outer circumferential edge portion of the wafer from the face side, and
a rotating step of rotating the wafer in at least one revolution, and
the cutting step and the rotating step are alternately repeated.

Assignees

• Okamura Takashi
• Harada Shigenori
• Disco Corp

Inventors

• Okamura Takashi
• Harada Shigenori

Classifications

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title