Method of manufacturing semiconductor device, semiconductor manufacturing device, and system

Patent metadata

Field	Value
Publication number	US-2023223251-A1
Application number	US-202117997158-A
Country	US
Kind code	A1
Filing date	Apr 20, 2021
Priority date	Apr 28, 2020
Publication date	Jul 13, 2023
Grant date	—

Abstract

In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

First claim

1 . A method of manufacturing a semiconductor device, the method comprising:
applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

2 . The method according to claim 1 , wherein forming the protective film is performed at the atmosphere.

3 . The method according to claim 1 , wherein forming the protective film is performed in a vacuum.

4 . The method according to claim 1 , wherein removing the protective film is performed in a vacuum.

5 . The method according to claim 4 , further including, after removing the protective film, forming a film on the substrate in a vacuum without exposing the substrate to an atmosphere.

6 . The method according to claim 1 , wherein removing the protective film is performed at the atmosphere.

7 . The method according to claim 6 , further including, after removing the protective film, forming a film on the substrate at the atmosphere.

8 . The method according to claim 7 , wherein in forming the film, the film is formed by a plating method.

9 . The method according to claim 1 , further including, before forming the protective film, removing an oxide generated on the substrate.

10 . The method according to claim 9 , wherein removing the oxide is performed at the atmosphere.

11 . The method according to claim 10 , wherein removing the oxide includes removing the oxide with a chemical solution containing hydrogen fluoride (HF).

12 . The method according to claim 9 , wherein removing the oxide is performed in a vacuum.

13 . The method according to claim 12 , wherein removing the oxide includes:
supplying a mixed gas containing a gas containing a halogen element and a basic gas to the substrate to transform the oxide to generate a reaction product; and removing the reaction product.

14 . The method according to claim 1 , wherein a physical property of the ionic liquid changes depending on an environmental factor.

15 . The method according to claim 14 , wherein the environmental factor includes temperature.

16 . The method according to claim 14 , wherein the physical property includes at least one of viscosity and adhesiveness.

17 . The method according to claim 1 , wherein the ionic liquid has a property of not evaporating in a vacuum.

18 . The method according to claim 1 , wherein the substrate has a region where a conductive material is exposed on a surface.

19 . A semiconductor manufacturing device comprising:
a first processing module configured to apply a liquid material containing an ionic liquid on a substrate to form a protective film; a second processing module configured to remove the protective film formed on the substrate; and a transfer module configured to transfer at an atmosphere the substrate between the first processing module and the second processing module.

20 . A system comprising:
a first processing device configured to apply a liquid material containing an ionic liquid on a substrate to form a protective film; a second processing device configured to remove the protective film formed on the substrate; and a transfer device configured to transfer at an atmosphere the substrate between the first processing device and the second processing device.

Assignees

• Tokyo Electron Ltd

Inventors

• Ueda Hirokazu
• Iwashita Mitsuaki
• Umeshita Naoki
• Iizuka Yoji
• Hayakawa Takashi
• Sekiguchi Kenji
• Akiyama Koji

Classifications

• H10P72/0448 Primary

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/043

  for electroplating · CPC title