Techniques for improving the performance and extending the lifetime of an ion source
US-9530615-B2 · Dec 27, 2016 · US
US2023191461A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023191461-A1 |
| Application number | US-202218078913-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 9, 2022 |
| Priority date | Dec 22, 2021 |
| Publication date | Jun 22, 2023 |
| Grant date | — |
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To clean components in semiconductor manufacturing equipment, such as an optical system or an electron beam system, a component is heated in a chamber. A supercritical fluid formulation is applied to the component in the chamber, which removes molecular and/or particulate contaminants. The supercritical fluid formulation can include one or more of carbon dioxide, water, HCF, alkane, alkene, nitrous oxide, methanol, ethanol, or acetone.
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What is claimed is: 1 . A cleaning method comprising: heating a component of an optical system or an electron beam system in a chamber; and applying a supercritical fluid formulation to the component in the chamber thereby removing molecular and/or particulate contaminants, wherein the supercritical fluid formulation includes one or more of carbon dioxide, water, HCF, alkane, alkene, nitrous oxide, methanol, ethanol, or acetone. 2 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes carbon dioxide. 3 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes a co-solvent that includes one or more of an alcohol, an ether, a thiol, a ketone, a hydrocarbon, a nitrile, an amide, an aromatic compound, an aprotic solvent, HFC, DMF, or NMP. 4 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes a surfactant that includes one or more of acetyl acetone, hexafluoro acetyl acetone, an acetylenic alcohol, a diol, a long alkyl chain secondary amine, or a tertiary amine. 5 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes a chelating agent that includes one or more of citric acid, EDTA, oxalic acid, a polycarboxylic acid, a substituted dithiocarbamate, a malonic acid ester, or polyethylene glycol. 6 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes an oxidant that includes one or more of ozone or hydrogen peroxide. 7 . The cleaning method of claim 1 , wherein the supercritical fluid formulation includes a dispersant that includes one or more of sodium tripolyphosphate or a quaternary ammonium salt. 8 . The cleaning method of claim 1 , wherein the component is a laser source, an x-ray light source, a DUV source, an EUV source, an illumination optics, a collection optics, or a broadband plasma and laser cavity. 9 . The cleaning method of claim 1 , wherein the component is an electron gun system, an electron column system, a vacuum chamber, or a platform. 10 . The cleaning method of claim 1 , wherein the component is an optics, and wherein the optics includes CLBO, BBO, KTP, PPKTP, LBO, DKDP, ADP, KDP, LiIO3, KNbO 3 , LiNbO 3 , AgGaS 2 , AgGaSe 2 , MgF 2 , CaF 2 , BaF 2 , LiF, YAG, TGG, TiO 2 , ZnS, ZnSe, GaAs, or SiGe. 11 . The cleaning method of claim 1 , wherein the component is a crystal, and wherein the crystal includes an oxide coating, Ta 2 O 5 , ZrO 2 , HfO 2 , A1 2 O 3 , SiO 2 , Nb 2 O 5 , TiO 2 , FS, SBO, a fluoride coating, LiF, CaF 2 , MgF 2 , LaF 3 , AIF 3 , LiF, LaF 3 , GdF 3 , or NdF 3 . 12 . The cleaning method of claim 1 , wherein the component is a precision aperture, pneumatic delivering system, electron beam aperture, vacuum compatible mechanics, or an optomechanics. 13 . The cleaning method of claim 1 , wherein the component is a cable, printed circuit board, sensor, piezoelectric component, electron beam deflector, electrostatic lens, or pin-diode. 14 . The cleaning method of claim 1 , wherein the component is an light-emitting diode, emitter, time delay and integration sensor, charge-coupled device, or complementary metal-oxide-semiconductor. 15 . The cleaning method of claim 1 , wherein the component is a sealing material, and wherein the sealing material includes indium, copper, silver, or a polymer. 16 . The cleaning method of claim 1 , further comprising passivating the component after the applying. 17 . A cleaning system comprising: a supercritical fluid chamber configured to hold a component that is cleaned; a CO 2 tank; a fluid line connecting the CO 2 tank to the supercritical fluid chamber; a heater disposed on the supercritical fluid chamber that is configured to heat the component; and a pump disposed on the fluid line configured to pressurize CO 2 from the CO 2 tank, wherein the heater and the pump are configured to operate such that the CO 2 is applied to the component as supercritical CO 2 . 18 . The cleaning system of claim 17 , further comprising a CO 2 recycle system in fluid communication with the supercritical fluid chamber and the CO 2 tank. 19 . The cleaning system of claim 17 , further comprising an additional tank in fluid communication with the fluid line, wherein the additional tank holds one or more of a co-solvent, a surfactant, a chelating agent, an oxidant, or a dispersant.
Cleaning only by supercritical fluids · CPC title
Solvents · CPC title
Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title
Chemistry & Metallurgy · mapped topic
by liquid gases or supercritical fluids · CPC title
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