Face-up wafer edge polishing apparatus

Patent metadata

Field	Value
Publication number	US-2023024009-A1
Application number	US-202117380788-A
Country	US
Kind code	A1
Filing date	Jul 20, 2021
Priority date	Jul 20, 2021
Publication date	Jan 26, 2023
Grant date	—

Abstract

Exemplary substrate edge polishing apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include an edge ring seated on the chuck body. The apparatuses may include a retaining wall disposed radially outward of the edge ring. The apparatuses may include a slurry delivery port disposed radially inward of the retaining wall. The apparatuses may include a cylindrical spindle that is positionable over the chuck body. The apparatuses may include an annular polishing pad coupled with a lower end of the cylindrical spindle.

First claim

What is claimed is:

1 . A substrate edge polishing apparatus, comprising:
a chuck body defining a substrate support surface; an edge ring seated on the chuck body; a retaining wall disposed radially outward of the edge ring; a slurry delivery port disposed radially inward of the retaining wall; a spindle that is positionable over the chuck body; and an annular polishing pad coupled with a lower end of the spindle.

2 . The substrate edge polishing apparatus of claim 1 , wherein:
an inner diameter of the annular polishing pad is less than an inner diameter of the edge ring.

3 . The substrate edge polishing apparatus of claim 1 , wherein:
the spindle is rotatable and laterally translatable relative to the chuck body.

4 . The substrate edge polishing apparatus of claim 1 , wherein:
a height of a top surface of the edge ring is within about 10 microns of a height of a substrate positioned on the substrate support surface.

5 . The substrate edge polishing apparatus of claim 1 , further comprising:
a slurry drainage port positioned within one or both of the chuck body and the retaining wall.

6 . The substrate edge polishing apparatus of claim 1 , wherein:
an outer edge of the edge ring is positioned against an inner surface of the retaining wall.

7 . The substrate edge polishing apparatus of claim 1 , wherein:
the edge ring is removably coupled with the chuck body.

8 . A substrate edge polishing apparatus, comprising:
a chuck body defining a substrate support surface; an edge ring seated on the chuck body, the edge ring having an inner diameter that is less than about 5% larger than a diameter of substrate support surface; a spindle that is positionable over the chuck body; a rotation drive mechanism coupled with the spindle; and an annular polishing pad coupled with a lower end of the spindle.

9 . The substrate edge polishing apparatus of claim 8 , wherein:
the annular polishing pad comprises a CMP polishing pad or an abrasion disk.

10 . The substrate edge polishing apparatus of claim 8 , wherein:
a top surface of the edge ring tapers toward an outer periphery of the edge ring; and a bottom surface of the annular polishing pad tapers toward an outer periphery of the annular polishing pad.

11 . The substrate edge polishing apparatus of claim 8 , wherein:
the chuck body comprises an electrostatic chuck or a vacuum chuck.

12 . The substrate edge polishing apparatus of claim 8 , further comprising:
a retaining wall disposed radially outward of the edge ring; a polishing slurry source; and a slurry delivery port fluidly coupled with the polishing slurry source, the slurry delivery port being disposed radially inward of the retaining wall.

13 . The substrate edge polishing apparatus of claim 8 , wherein:
a top surface of the substrate support surface is concave or convex.

14 . The substrate edge polishing apparatus of claim 8 , wherein:
the substrate edge polishing apparatus is disposed within a polishing chamber that comprises a face down polishing station.

15 . A method of polishing a substrate, comprising:
positioning a substrate face up within an open interior of an edge ring disposed atop a substrate support surface of a chuck body; clamping the substrate to the chuck body; engaging a top surface of the substrate with an annular polishing pad; and rotating the annular polishing pad against the top surface of the substrate.

16 . The method of polishing a substrate of claim 15 , further comprising:
laterally translating the annular polishing pad while rotating the annular polishing pad against the top surface of the substrate.

17 . The method of polishing a substrate of claim 15 , further comprising:
delivering a polishing slurry to the top surface of the substrate.

18 . The method of polishing a substrate of claim 15 , further comprising:
applying downward force to the annular polishing pad while rotating the annular polishing pad against the top surface of the substrate.

19 . The method of polishing a substrate of claim 15 , wherein:
a central axis of the annular polishing pad is offset from a central axis of the substrate while rotating the annular polishing pad against the top surface of the substrate.

20 . The method of polishing a substrate of claim 15 , further comprising:
re-surfacing the annular polishing pad.

Assignees

• Applied Materials Inc

Inventors

• Song Kevin H
• Pang Benedict W

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10P72/7611 Primary

  characterised by edge profile or support profile · CPC title

• H01L21/68735 Primary

  Electricity · mapped topic

• H01L21/30625

  Electricity · mapped topic

• B24B37/20 Primary

  Lapping pads for working plane surfaces · CPC title