Substrate liquid processing method and substrate liquid processing apparatus

Patent metadata

Field	Value
Publication number	US-2022406605-A1
Application number	US-202017755405-A
Country	US
Kind code	A1
Filing date	Oct 16, 2020
Priority date	Oct 30, 2019
Publication date	Dec 22, 2022
Grant date	—

Abstract

A substrate liquid processing method includes holding a substrate W with a substrate holder 52 ; supplying a plating liquid L 1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61 ; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

First claim

1 . A substrate liquid processing method of performing a liquid processing on a substrate by supplying a plating liquid onto the substrate, the substrate liquid processing method comprising:
holding the substrate with a substrate holder; supplying the plating liquid onto a top surface of the substrate; covering the substrate with a cover body disposed above the held substrate, the cover body having a ceiling portion; and heating the plating liquid on the substrate by a heating unit provided in either one of at least the cover body and the substrate holder, in a state that the substrate is covered with the cover body, wherein a gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

2 . The substrate liquid processing method of claim 1 ,
wherein the gas exhausting operation is performed multiple times in the heating of the plating liquid.

3 . The substrate liquid processing method of claim 1 ,
wherein the cover body comprises a sidewall portion extending downwards from the ceiling portion, and the gas exhausting operation is performed such that the substrate is not exposed between a bottom surface of the ceiling portion and a lower end of the sidewall portion.

4 . A substrate liquid processing apparatus configured to perform a liquid processing on a substrate by supplying a plating liquid onto the substrate, the substrate liquid processing apparatus comprising:
a substrate holder configured to hold the substrate; a substrate holder elevating mechanism configured to move the substrate holder up and down; a plating liquid supply configured to supply the plating liquid onto a top surface of the substrate held by the substrate holder; a cover body disposed above the substrate and configured to cover the substrate held by the substrate holder, the cover body having a ceiling portion equal to or larger than the substrate in size; a cover body moving mechanism connected to the cover body and configured to move the cover body up and down; a heating unit provided in either one of at least the substrate holder and the cover body; and a controller configured to output a control signal such that holding the substrate with the substrate holder; supplying the plating liquid onto the top surface of the substrate; covering the substrate with the cover body; and heating the plating liquid on the substrate by the heating unit in a state that the substrate is covered with the cover body are performed, wherein the controller outputs a control signal such that a gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body moving mechanism of the cover body and the substrate holder elevating mechanism of the substrate holder vertically is performed in the heating of the plating liquid on the substrate.

5 . The substrate liquid processing apparatus of claim 4 ,
wherein the gas exhausting operation is performed multiple times in the heating of the plating liquid on the substrate.

6 . The substrate liquid processing apparatus of claim 4 ,
wherein the cover body comprises a sidewall portion extending downwards from the ceiling portion, and the gas exhausting operation is performed such that the substrate is not exposed between a bottom surface of the ceiling portion and a lower end of the sidewall portion.

Assignees

• Tokyo Electron Ltd

Inventors

• Inatomi Yuichiro

Classifications

• H10P72/0448 Primary

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P14/46 Primary

  using a liquid · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title