Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2022316059-A1
Application number	US-202017628682-A
Country	US
Kind code	A1
Filing date	Jul 13, 2020
Priority date	Jul 25, 2019
Publication date	Oct 6, 2022
Grant date	—

Abstract

A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

First claim

1 - 8 . (canceled)

9 . A substrate processing method comprising:
forming a protective film on a metal film among the metal film and an insulating film exposed on a surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film; depositing an insulating material on a surface of the insulating film using an atomic layer deposition method after the forming the protective film; removing the protective film from the surface of the metal film after the depositing the insulating material; and depositing a metal material on the surface of the metal film after the removing the protective film.

10 . The substrate processing method of claim 9 , further comprising:
repeating the forming the protective film, the depositing the insulating material, the removing the protective film, and the depositing the metal material.

11 . The substrate processing method of claim 10 , wherein the metal material includes tungsten, and
the film-forming material is a liquid or gas containing a molecule having a Si—N bond.

12 . The substrate-processing method of claim 11 , further comprising:
maintaining an atmosphere in contact with the surface of the metal film in a deoxidized atmosphere, wherein the forming the protective film is performed in a state in which the deoxidized atmosphere is maintained.

13 . The substrate processing method of claim 12 , further comprising:
removing an oxide film from the surface of the metal film prior to the forming the protective film.

14 . The substrate processing method of claim 9 , wherein the metal material includes at least one of gold, silver, copper, iron, cobalt, nickel, zinc, rhodium, ruthenium, palladium, platinum, osmium, and iridium, and
the film-forming material contains a sulfur atom.

15 . The substrate processing method of claim 14 , wherein the metal material includes at least one of osmium, iridium, rhodium, and ruthenium.

16 . The substrate-processing method of claim 9 , further comprising:
maintaining an atmosphere in contact with the surface of the metal film in a deoxidized atmosphere, wherein the forming the protective film is performed in a state in which the deoxidized atmosphere is maintained.

17 . The substrate processing method of claim 9 , further comprising:
removing an oxide film from the surface of the metal film prior to the forming the protective film.

18 . A substrate processing apparatus comprising;
a protective film forming part configured to form a protective film on a metal film among the metal film and an insulating film exposed on a surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film; an insulating material depositing part configured to deposit an insulating material on a surface of the insulating film using an atomic layer deposition method; a protective film removing part configured to remove the protective film from the surface of the metal film; and a metal material depositing part configured to deposit a metal material on the surface of the metal film.

Assignees

• Tokyo Electron Ltd

Inventors

• Hiroshiro Koukichi
• Muramatsu Makoto
• Kagawa Koji
• Sekiguchi Kenji

Classifications

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/01

  Manufacture or treatment · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10P14/60

  of insulating materials · CPC title

• C23C16/507

  using external electrodes, e.g. in tunnel type reactors · CPC title