Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2022301880-A1
Application number	US-202217690709-A
Country	US
Kind code	A1
Filing date	Mar 9, 2022
Priority date	Mar 17, 2021
Publication date	Sep 22, 2022
Grant date	—

Abstract

A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

First claim

What is claimed is:

1 . A substrate processing method comprising:
a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

2 . The substrate processing method of claim 1 , further comprising:
after the mask removing process, a residue removing process of removing a residue caused by at least one of the zirconium oxide film and the mask removing solution by supplying an aqueous solution containing a fluoride compound to the substrate.

3 . The substrate processing method of claim 2 , further comprising:
between the mask removing process and the residue removing process, another residue removing process of removing a residue caused by the mask removing liquid by supplying heated pure water to the substrate.

4 . The substrate processing method of claim 2 , wherein, in the drying process, on the surface of the substrate that is wet with the rinsing liquid, the rinsing liquid is replaced with a water-soluble alcohol, and then the surface of the substrate is dried.

5 . The substrate processing method of claim 2 , wherein, in the drying process, the surface of the substrate is dried using a processing fluid in a supercritical state.

6 . The substrate processing method of claim 2 , wherein the drying process includes:
a first replacing process of replacing the rinsing liquid on the surface of the substrate that is wet with the rinsing liquid with an organic solvent; a water-repellent process of supplying a water-repellent agent to the surface of the substrate after the first replacing process; a second replacing process of replacing the water-repellent agent on the surface of the substrate with an organic solvent after the water-repellent process; and a shake-off process of shaking off the organic solvent located on the surface of the substrate after the second replacing process.

7 . The substrate processing method of claim 2 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and pure water are mixed.

8 . The substrate processing method of claim 2 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and steam are mixed.

9 . The substrate processing method of claim 1 , further comprising:
after the mask removing process, a residue removing process of removing a residue caused by at least one of the zirconium oxide film and the mask removing solution by supplying an aqueous solution containing ammonia to the substrate.

10 . The substrate processing method of claim 9 , further comprising:
between the mask removing process and the residue removing process, another residue removing process of removing a residue caused by the mask removing liquid by supplying heated pure water to the substrate.

11 . The substrate processing method of claim 1 , wherein, in the drying process, on the surface of the substrate that is wet with the rinsing liquid, the rinsing liquid is replaced with a water-soluble alcohol, and then the surface of the substrate is dried.

12 . The substrate processing method of claim 1 , wherein, in the drying process, the surface of the substrate is dried using a processing fluid in a supercritical state.

13 . The substrate processing method of claim 1 , wherein the drying process includes:
a first replacing process of replacing the rinsing liquid on the surface of the substrate that is wet with the rinsing liquid with an organic solvent; a water-repellent process of supplying a water-repellent agent to the surface of the substrate after the first replacing process; a second replacing process of replacing the water-repellent agent on the surface of the substrate with an organic solvent after the water-repellent process; and a shake-off process of shaking off the organic solvent located on the surface of the substrate after the second replacing process.

14 . The substrate processing method of claim 1 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and pure water are mixed.

15 . The substrate processing method of claim 1 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and steam are mixed.

16 . A substrate processing apparatus comprising:
a holder configured to hold and rotate a substrate; a liquid supplier configured to supply a processing liquid to the substrate held by the holder; and a controller configured to control the holder and the liquid supplier, wherein the controller is configured to a control to: supply a mask removing liquid containing sulfuric acid as a main component to the substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape, so that the zirconium oxide film is removed; and dry the surface of the substrate that is wet with a rinsing liquid after the zirconium oxide film is removed.

Assignees

• Tokyo Electron Ltd

Inventors

• Yamashita Atsushi
• Kagawa Koji

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title