Device including semiconductor substrate containing gallium nitride and method for producing the same
US-2017335488-A1 · Nov 23, 2017 · US
US2022288719A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022288719-A1 |
| Application number | US-202217653564-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 4, 2022 |
| Priority date | Mar 9, 2021 |
| Publication date | Sep 15, 2022 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
There is provided a laser processing method for performing laser processing on a wafer having a functional layer on a substrate. The laser processing method includes a blackening step of emitting a pulsed laser beam of a wavelength transparent to the functional layer from a laser oscillator and blackening the functional layer by irradiating the functional layer with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the functional layer is processed such that an overlap ratio of the pulsed laser beam successively applied to the functional layer is equal to or more than 90% and less than 100%, and a groove processing step of forming a laser-processed groove by irradiating the blackened functional layer with the pulsed laser beam and making the blackened functional layer absorb the pulsed laser beam, after performing the blackening step.
Opening claim text (preview).
What is claimed is: 1 . A laser processing method for performing laser processing on a wafer having organic films on a substrate, the laser processing method comprising: a blackening step of emitting a pulsed laser beam of a wavelength transparent to the organic films from a laser oscillator and blackening the organic films by irradiating the organic films with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the organic films are processed such that an overlap ratio of the pulsed laser beam successively applied to the organic films is equal to or more than 90% and less than 100%; and a groove processing step of forming a laser-processed groove by irradiating the blackened organic films with the pulsed laser beam and making the blackened organic films absorb the pulsed laser beam, after performing the blackening step. 2 . The laser processing method according to claim 1 , wherein, in the blackening step, base parts of a Gaussian distribution of the pulsed laser beam applied to the organic films are modified to a vertical distribution, so that the pulsed laser beam of energy lower than the processing threshold value is prevented from being transmitted through the organic films and applied to the substrate.
Auxiliary equipment · CPC title
Silicon · CPC title
for making a groove or trench, e.g. for scribing a break initiation groove · CPC title
involving non-metallic material, e.g. isolators · CPC title
using electric or magnetic fields or particle radiation · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.