Piezoelectric materials and methods of property control

US9728708B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9728708-B2
Application numberUS-201214352938-A
CountryUS
Kind codeB2
Filing dateOct 18, 2012
Priority dateOct 18, 2011
Publication dateAug 8, 2017
Grant dateAug 8, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.

First claim

Opening claim text (preview).

The invention claimed is: 1. A piezoelectric device comprising: a piezoelectric substrate having a relaxor composition, said piezoelectric substrate comprising: an array of first piezoelectric regions; and an array of second piezoelectric regions, wherein each second region is laterally adjacent to at least one respective first piezoelectric region; and an array of electrodes formed adjacent to a first surface of said piezoelectric substrate, each electrode of said array of…

Assignees

Inventors

Classifications

  • Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • C30B33/04Primary

    Chemistry & Metallurgy · mapped topic

  • Operations & Transport · mapped topic

  • Cross-Sectional Technologies · mapped topic

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Frequently asked questions

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What does patent US9728708B2 cover?
Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal struc…
Who is the assignee on this patent?
Univ Dalhousie
What technology area does this patent fall under?
Primary CPC classification C30B33/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).