Device including semiconductor substrate containing gallium nitride and method for producing the same
US-2017335488-A1 · Nov 23, 2017 · US
US9728708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9728708-B2 |
| Application number | US-201214352938-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 18, 2012 |
| Priority date | Oct 18, 2011 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.
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The invention claimed is: 1. A piezoelectric device comprising: a piezoelectric substrate having a relaxor composition, said piezoelectric substrate comprising: an array of first piezoelectric regions; and an array of second piezoelectric regions, wherein each second region is laterally adjacent to at least one respective first piezoelectric region; and an array of electrodes formed adjacent to a first surface of said piezoelectric substrate, each electrode of said array of…
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