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Methods for top-down fabrication of wafer scale TMDC monolayers
US9809903B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9809903-B2 |
| Application number | US-201615061696-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2016 |
| Priority date | Mar 4, 2016 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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Abstract
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A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a TMDC monolayer, comprising: providing a multi-layer transition metal dichalcogenide (TMDC) film, the multi-layer TMDC film comprising a plurality of layers of the TMDC; positioning the multi-layer TMDC film on a conducting substrate; contacting the conducting substrate and the multi-layer TMDC film with an electrolyte solution; applying a predetermined electrode potential on the conducting substrate for a predetermined time; and…
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- What does patent US9809903B2 cover?
- A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate …
- Who is the assignee on this patent?
- Uchicago Argonne Llc
- What technology area does this patent fall under?
- Primary CPC classification C25F3/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 07 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).