Method of manufacturing semiconductor device and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2022084813-A1
Application number	US-202117199510-A
Country	US
Kind code	A1
Filing date	Mar 12, 2021
Priority date	Sep 11, 2020
Publication date	Mar 17, 2022
Grant date	—

Abstract

According to one embodiment, a method of manufacturing a semiconductor device includes loading a substrate into a processing container, airtightly sealing the processing container in which the substrate has been loaded, reducing a pressure of the processing container airtightly sealed, supplying a processing solution into the processing container with reduced pressure, performing a process on the substrate using the processing solution, discharging the processing solution used for the process from the processing container, after discharging the processing solution, opening the processing container, and unloading the substrate subjected to the process out of the processing container.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, the method comprising:
loading a substrate into a processing container; airtightly sealing the processing container in which the substrate has been loaded; reducing a pressure of the processing container airtightly sealed; supplying a processing solution into the processing container with reduced pressure; performing a process on the substrate using the processing solution; discharging the processing solution used for the process from the processing container; after discharging the processing solution, opening the processing container; and unloading the substrate subjected to the process out of the processing container.

2 . The method of manufacturing a semiconductor device according to claim 1 ,
wherein the process is at least one of a plating process or a cleaning process.

3 . The method of manufacturing a semiconductor device according to claim 1 ,
wherein the process is a plating process, further comprising before the processing solution is supplied, supplying a first rinse solution into the processing container to perform a cleaning process on the substrate.

4 . The method of manufacturing a semiconductor device according to claim 3 , further comprising
after performing the cleaning process on the substrate using the first rinse solution and before supplying the processing solution, performing a cycle purge process of supplying an inert gas into the processing container to increase a pressure inside the processing container to an atmospheric pressure or higher, then exhausting the inert gas, and reducing the pressure inside the processing container a predetermined number of times.

5 . The method of manufacturing a semiconductor device according to claim 1 ,
wherein the process is a plating process, further comprising after the process, supplying a second rinse solution into the processing container to perform a cleaning process on the substrate.

6 . The method of manufacturing a semiconductor device according to claim 1 ,
wherein the process is a plating process, further comprising after the processing solution is discharged, circulating the processing solution to be supplied again into the processing container.

7 . The method of manufacturing a semiconductor device according to claim 6 , wherein
supplying the processing solution into the processing container; discharging the processing solution from the processing container; performing the process on the substrate using the processing solution; and while performing the processing solution supply, the processing solution discharge, and the process on the substrate above in parallel, circulating the processing solution to supply the processing solution into the processing container again.

8 . The method of manufacturing a semiconductor device according to claim 1 , further comprising
after discharging the processing solution and before opening the processing container, supplying an inert gas into the processing container.

9 . The method of manufacturing a semiconductor device according to claim 8 ,
wherein supplying the inert gas into the processing container includes supplying the inert gas into the processing container to set a pressure inside the processing container to an atmospheric pressure.

10 . The method of manufacturing a semiconductor device according to claim 1 , wherein
when discharging the processing solution from the processing container, supplying an inert gas into the processing container parallel to discharge the processing solution.

11 . The method of manufacturing a semiconductor device according to claim 1 , further comprising:
after reducing a pressure inside the processing container airtightly sealed and before supplying the processing solution to the processing container, supplying an inert gas into the processing container; and when supplying the processing solution into the processing container, exhausting a gas from the processing container parallel to supply the processing solution.

12 . The method of manufacturing a semiconductor device according to claim 11 ,
wherein supplying the inert gas into the processing container includes supplying the inert gas into the processing container to set a pressure inside the processing container to an atmospheric pressure.

13 . A substrate processing apparatus comprising:
a substrate housing unit; a lid that is connected to the substrate housing unit via a sealing unit to form a processing container capable of being airtightly sealed; a substrate holding unit that is capable of holding a substrate in the processing container; a first opening that is provided in the processing container to supply an inert gas into the processing container; a second opening that is provided in the processing container to supply a rinse solution into the processing container; a third opening that is provided in the processing container to supply a processing solution into the processing container; a fourth opening that is provided in the processing container to exhaust a gas in the processing container; a fifth opening that is provided in the processing container to discharge the rinse solution from the processing container; and a sixth opening that is provided in the processing container to discharge the processing solution from the processing container.

14 . The substrate processing apparatus according to claim 13 , further comprising
a controller that controls a first to sixth valves connected to the first to sixth openings, respectively, wherein the controller opens the fourth valve to exhaust a gas in the processing container airtightly sealed and reduces a pressure inside the processing container, opens the second valve to supply the rinse solution into the processing container under reduced pressure, opens the fifth valve to discharge the rinse solution from the processing container, opens the third valve to supply the processing solution into the processing container from which the rinse solution has been discharged, performs a process on the substrate with the processing solution supplied, after the process on the substrate is completed, opens the sixth valve to discharge the processing solution from the processing container, opens the second valve to supply the rinse solution into the processing container from which the processing solution has been discharged, opens the fifth valve to discharge the rinse solution from the processing container, and opens the first valve to supply the inert gas into the processing container from which the rinse solution has been discharged.

15 . The substrate processing apparatus according to claim 14 ,
wherein the controller before opening the fourth valve to reduce a pressure of the processing container, loads the substrate into the processing container, and after opening the first valve to supply the inert gas into the processing container, unloads the substrate out of the processing container.

16 . The substrate processing apparatus according to claim 14 ,
wherein at least before opening the sixth valve to discharge the processing solution, the controller closes the third valve to stop supply of the processing solution into the processing container.

17 . The substrate processing apparatus according to claim 13 , further comprising
a circulation mechanism that circulates the processing solution discharged from the sixth opening to the third opening.

18 . The substrate processing apparatus according to claim 13 , f

Assignees

• Kioxia Corp

Inventors

• Iyama Makoto
• Shoji Fumito
• Shomura Masatoshi

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P72/0441

  Apparatus for sealing, encapsulating, glassing, decapsulating or the like · CPC title

• H10P72/0416

  with the semiconductor substrates being dipped in baths or vessels · CPC title