Substrate processing method and substrate processing device

Patent metadata

Field	Value
Publication number	US-2022068642-A1
Application number	US-202117411089-A
Country	US
Kind code	A1
Filing date	Aug 25, 2021
Priority date	Aug 27, 2020
Publication date	Mar 3, 2022
Grant date	—

Abstract

A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

First claim

What is claimed is:

1 . A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method comprising:
a holding process including:
holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and
an adhesion process including:
supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

2 . The substrate processing method according to claim 1 , wherein
the adhesion process includes diluting, before the solution containing the metal is supplied to the substrate, the solution by using a diluting liquid to adjust a concentration of the metal contained in the solution.

3 . The substrate processing method according to claim 1 , wherein
the adhesion process includes diluting step by step the solution by using a plurality of diluting liquids to adjust a concentration of the metal contained in the solution.

4 . The substrate processing method according to claim 1 , wherein
a concentration of the metal contained in the solution is within a range equal to or more than 10 [ppm] and equal to or less than 10000 [ppm].

5 . The substrate processing method according to claim 1 further comprising:
a hydrophilization process including:
hydrophilizing a surface of the silicon film, wherein

the adhesion process includes supplying the solution containing the metal to the substrate in a state where the surface of the silicon film is hydrophilized in the hydrophilization process.

6 . The substrate processing method according to claim 1 , wherein
the adhesion process includes forming a puddle of the solution containing the metal on the substrate, and then flying away the solution containing the metal.

7 . The substrate processing method according to claim 1 , wherein
the adhesion process includes supplying, to the substrate, a mixed solution in which the solution containing the metal and an organic solvent are mixed.

8 . The substrate processing method according to claim 7 , wherein
the adhesion process includes supplying, to the substrate, the mixed solution in which the solution containing the metal and the organic solvent are mixed such that a thickness of the mixed solution is equal to or more than 100 nm.

9 . The substrate processing method according to claim 1 , wherein
the metal contained in the solution includes at least one of Ni, Pd, Ag, Au, Sn, Sb, Cu, Cd, Al, Co, Pt, Mo, Ti, W, and Cr.

10 . The substrate processing method according to claim 1 further comprising:
an adjusting process including:
supplying, after the adhesion process, a cleaning liquid to the substrate to adjust an adhesion amount of the metal to the surface of the silicon film.

11 . The substrate processing method according to claim 1 further comprising:
a bevel cleaning process including:
cleaning, after the adhesion process, a bevel portion of the substrate.

12 . The substrate processing method according to claim 1 further comprising:
a back-surface cleaning process including:
cleaning, after the adhesion process, a back surface of the substrate.

13 . The substrate processing method according to claim 1 further comprising:
a removing process including:
removing, after executing the thermal treatment, the metal that is remaining on the surface of the silicon film.

14 . A substrate processing device used for a substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the device comprising:
a holding unit that holds a substrate; a supply unit that supplies, to the substrate, a solution containing metal; and a controller that controls operation of the holding unit and operation of the supply unit, wherein the controller is configured to execute:
a holding process including:
holding, before executing the thermal treatment, the substrate on which the silicon film is formed; and

an adhesion process including:
supplying, to the substrate that is held in the holding process, the solution containing the metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Sekiguchi Kenji
• Yonezawa Syuhei
• Suzuki Daisuke
• Takezawa Yoshihiro
• Matsubara Yoshihisa

Classifications

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P14/3806 Primary

  using crystallisation-enhancing elements · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title