Plasma treatment apparatus, semiconductor manufacturing apparatus, and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-2022013367-A1
Application number	US-202117483052-A
Country	US
Kind code	A1
Filing date	Sep 23, 2021
Priority date	Jul 26, 2017
Publication date	Jan 13, 2022
Grant date	—

Abstract

A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

First claim

1 - 7 . (canceled)

8 . A manufacturing method of a semiconductor device comprising:
providing a plasma treatment apparatus including a discharge device and a nonmetallic tube, the discharge device generating plasma under atmospheric pressure, and the plasma generated in the discharge device advancing through the nonmetallic tube; treating a surface of a semiconductor wafer by irradiating the plasma released from the nonmetallic tube toward the semiconductor wafer in an environment under atmospheric pressure.

9 . The manufacturing method of a semiconductor device according to claim 8 , wherein
the semiconductor wafer is placed in a liquid, and the plasma is irradiated to the liquid between the nonmetallic tube and the semiconductor wafer.

10 . The manufacturing method of a semiconductor device according to claim 8 , wherein
the semiconductor wafer is treated by supplying a liquid treating the surface thereof, and the plasma is irradiated to the liquid before reaching the surface of the semiconductor wafer.

11 . The manufacturing method of a semiconductor device according to claim 9 , wherein
the liquid etches a member attached to the surface of the semiconductor wafer.

12 . The manufacturing method of a semiconductor device according to claim 8 , wherein
a gas treating a member attached to the surface of the semiconductor wafer is supplied to the environment under atmospheric pressure.

13 . The manufacturing method of a semiconductor device according to claim 12 , wherein
a liquid treating the semiconductor wafer is supplied together with the gas.

14 . A manufacturing method of a semiconductor device, comprising:
generating radicals in liquid using atmospheric-pressure plasma; and promoting or suppressing etching of an object to be treated.

15 . The manufacturing method of a semiconductor device according to claim 14 , wherein
an inside of a concave portion provided in the object is selectively etched.

16 . The manufacturing method of a semiconductor device according to claim 15 , wherein
radicals suppressing etching of the object are generated, and a bottom face of the concave portion is expanded.

17 . The manufacturing method of a semiconductor device according to claim 15 , wherein
radicals promoting etching of the object are generated, and an opening of the concave portion is expanded.

18 . The manufacturing method of a semiconductor device according to claim 15 , wherein
one of a first structure and a second structure provided inside the object and exposed to an inner wall of the concave portion is selectively removed.

19 . The manufacturing method of a semiconductor device according to claim 14 , wherein
a coating is selectively formed on an inner face of the concave portion using radicals, and a portion of the concave portion without the coating is selectively etched.

20 . The manufacturing method of a semiconductor device according to claim 15 , wherein
the concave portion is formed by using an etching mask provided on a surface of the object to selectively etch the object, and the etching mask is removed while etching the object.

21 - 24 . (canceled)

Assignees

• Toshiba Memory Corp

Inventors

• Yoshimizu Yasuhito
• Yasui Hiroyuki
• Akeboshi Yuya
• Ito Fuyuma

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/18

  by combined dry cleaning and wet cleaning (H10P70/52 takes precedence) · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/287

  by chemical means · CPC title