Plasma processing apparatus and substrate support of plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-2022013339-A1
Application number	US-202117368887-A
Country	US
Kind code	A1
Filing date	Jul 7, 2021
Priority date	Jul 7, 2020
Publication date	Jan 13, 2022
Grant date	—

Abstract

There is provided a substrate support of a plasma processing apparatus. The substrate support includes a wafer placement surface and a ring placement surface on which a first ring and a second ring disposed at an outer peripheral side of the first ring without overlapping with the first ring in a vertical direction are placed, with a hole at a boundary between the first ring and the second ring. The substrate support further includes a lifter pin having a first holding portion and a second holding portion, the second holding portion being unitary with and extending axially from a base end of the first holding portion and having a protruding portion protruding from an outer circumference of the first holding portion, and a driving mechanism configured to raise and lower the lifter pin.

First claim

1 . A substrate support of a plasma processing apparatus, comprising:
a wafer placement surface on which a wafer is placed; a ring placement surface on which a first ring and a second ring are placed, with the second ring disposed at an outer peripheral side of the first ring without overlapping with the first ring in a vertical direction, the ring placement surface having a hole at a boundary between the first ring and the second ring and provided at an outer peripheral side of the wafer placement surface; a lifter pin having a first holding portion and a second holding portion, the second holding portion being unitary with and extending axially from a base end of the first holding portion and having a protruding portion protruding from an outer circumference of the first holding portion, and accommodated in the hole of the ring placement surface with the first holding portion facing the ring placement surface; and a driving mechanism configured to raise and lower the lifter pin.

2 . The substrate support of claim 1 , wherein the first holding portion and the second holding portion are coaxial rod-shaped members, and a cross-sectional area of the first holding portion is smaller than a cross-sectional area of the second holding portion.

3 . The substrate support of claim 1 , wherein the lifter pin is rotatable about an axis.

4 . The substrate support of claim 1 , wherein the second holding portion has a cross section that vertically overlaps with a part of each of the first ring and the second ring placed on the ring placement surface, and
the first holding portion has a cross section that vertically overlaps with either the first ring or the second ring placed on the ring placement surface.

5 . The substrate support of claim 1 , wherein the first ring and the second ring are made of different materials.

6 . The substrate support of claim 1 , further comprising:
a ring electrostatic chuck configured to attract at least one of the first ring and the second ring on the ring placement surface; and a gas supply mechanism configured to supply a heat transfer gas to a gap between a bottom surface of at least one of the first ring and the second ring and the ring placement surface.

7 . The substrate support of claim 1 , wherein the driving mechanism is configured to rotate the lifter pin to a first position where the first holding portion is disposed at a central side of the substrate support and a second position where the first holding portion is disposed at an outer peripheral side of the substrate support, and
the driving mechanism is further configured to raise and lower the lifter pin by selectively setting an arrangement of the lifter pin to any one of the first position or the second position.

8 . The substrate support of claim 7 , wherein the driving mechanism is configured to locate the lifter pin at the first position and raise a top portion of the lifter pin to a first height during the transfer of the first ring.

9 . The substrate support of claim 8 , wherein the driving mechanism is also configured to locate the lifter pin at the first position and raise the top portion of the lifter pin to a second height higher than the first height during the transfer of the first ring and the second ring.

10 . The substrate support of claim 8 , wherein the driving mechanism is also configured to locate the lifter pin at the first position and raise the top portion of the lifter pin to the second height during the transfer of the second ring.

11 . The substrate support of claim 8 , wherein the driving mechanism is also configured to locate the lifter pin at the second position and raise the top portion of the lifter pin to the first height during the transfer of the second ring.

12 . A plasma processing apparatus comprising:
a wafer placement surface on which a wafer is placed; a ring placement surface on which a first ring and a second ring are placed, with the second ring disposed at an outer peripheral side of the first ring without overlapping with the first ring in a vertical direction, the ring placement surface having a hole at a boundary between the first ring and the second ring and provided at an outer peripheral side of the wafer placement surface; a lifter pin having a first holding portion and a second holding portion, the second holding portion being unitary with and extending axially from a base end of the first holding portion and having a protruding portion protruding from an outer circumference of the first holding portion, and accommodated in the hole of the ring placement surface with the first holding portion facing the ring placement surface; and a driving mechanism configured to raise and lower the lifter pin.

Assignees

• Tokyo Electron Ltd

Inventors

• Dogome Masahiro

Classifications

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H10P72/0434

  mainly by convection · CPC title