Film forming material for lithography, composition for film formation for lithography, underlayer film for lithography, and method for forming pattern

Patent metadata

Field	Value
Publication number	US-2022010072-A1
Application number	US-201917295830-A
Country	US
Kind code	A1
Filing date	Nov 21, 2019
Priority date	Nov 21, 2018
Publication date	Jan 13, 2022
Grant date	—

Abstract

A film forming material for lithography comprising a maleimide resin represented by the following formula (1A)

First claim

1 . A film forming material for lithography comprising a maleimide resin represented by the following formula (1A):

wherein
each R is independently any one group selected from the group consisting of a hydrogen atom and an alkyl group having 1 to 4 carbon atoms;
each Z is independently a trivalent or tetravalent hydrocarbon group having 1 to 100 carbon atoms and optionally containing a heteroatom;
each R 1 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m1 is independently an integer of 0 to 4; and
n is an integer of 1 or more.

2 . The film forming material for lithography according to claim 1 , wherein n is an integer of 2 or more.

3 . The film forming material for lithography according to claim 1 , wherein the maleimide resin of formula (1A) is represented by the following formula (2A):

wherein R is as defined in formula (1A);
each R 2 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m2 is independently an integer of 0 to 3;
each m2′ is independently an integer of 0 to 4; and
n is an integer of 1 or more,

or by the following formula (3A):

wherein R is as defined in formula (1A);
R 3 and R 4 are each independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m3 is independently an integer of 0 to 4;
each m4 is independently an integer of 0 to 4; and
n is an integer of 2 or more.

4 . The film forming material for lithography according to claim 1 , wherein the heteroatom is selected from the group consisting of oxygen, fluorine, and silicon.

5 . The film forming material for lithography according to claim 1 , further comprising a crosslinking agent.

6 . The film forming material for lithography according to claim 5 , wherein the crosslinking agent is at least one selected from the group consisting of a phenol compound, an epoxy compound, a cyanate compound, an amino compound, a benzoxazine compound, a melamine compound, a guanamine compound, a glycoluril compound, a urea compound, an isocyanate compound, and an azide compound.

7 . The film forming material for lithography according to claim 5 , wherein the crosslinking agent has at least one allyl group.

8 . The film forming material for lithography according to claim 1 , further comprising a crosslinking promoting agent.

9 . The film forming material for lithography according to claim 8 , wherein the crosslinking promoting agent is at least one selected from the group consisting of an amine, an imidazole, an organic phosphine, and a Lewis acid.

10 . The film forming material for lithography according to claim 8 , wherein a content ratio of the crosslinking promoting agent is 0.1 to 5 parts by mass based on 100 parts by mass of a total mass of the maleimide resin.

11 . The film forming material for lithography according to claim 1 , further comprising a radical polymerization initiator.

12 . The film forming material for lithography according to claim 11 , wherein the radical polymerization initiator is at least one selected from the group consisting of a ketone-based photopolymerization initiator, an organic peroxide-based polymerization initiator, and an azo-based polymerization initiator.

13 . The film forming material for lithography according to claim 11 , wherein a content ratio of the radical polymerization initiator is 0.05 to 25 parts by mass based on 100 parts by mass of a total mass of the maleimide resin.

14 . A composition for film formation for lithography comprising the film forming material for lithography according to claim 1 and a solvent.

15 . The composition for film formation for lithography according to claim 14 , further comprising a base generating agent.

16 . The composition for film formation for lithography according to claim 14 , wherein the film for lithography is an underlayer film for lithography.

17 . An underlayer film for lithography formed by using the composition for film formation for lithography according to claim 16 .

18 . A method for forming a resist pattern, comprising the steps of:
forming an underlayer film on a substrate by using the composition for film formation for lithography according to claim 16 ; forming at least one photoresist layer on the underlayer film; and irradiating a predetermined region of the photoresist layer with radiation for development.

19 . A method for forming a circuit pattern, comprising the steps of:
forming an underlayer film on a substrate by using the composition for film formation for lithography according to claim 16 ; forming an intermediate layer film on the underlayer film by using a resist intermediate layer film material containing a silicon atom; forming at least one photoresist layer on the intermediate layer film; irradiating a predetermined region of the photoresist layer with radiation for development, thereby forming a resist pattern; etching the intermediate layer film with the resist pattern as a mask; etching the underlayer film with the obtained intermediate layer film pattern as an etching mask; and etching the substrate with the obtained underlayer film pattern as an etching mask, thereby forming a pattern on the substrate.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Yamada Kouichi
• Horiuchi Junya
• Makinoshima Takashi
• Echigo Masatoshi

Classifications

• C08G73/122

  containing chain terminating or branching agents · CPC title

• C08L79/085

  Unsaturated polyimide precursors · CPC title

• C08G73/126

  the unsaturated precursors being wholly aromatic · CPC title

• C08L2203/16

  used for films · CPC title

• C08G73/12 Primary

  Unsaturated polyimide precursors · CPC title