Integrated atomic layer passivation in tcp etch chamber and in-situ etch-alp method

Patent metadata

Field	Value
Publication number	US-2021287909-A1
Application number	US-202117200526-A
Country	US
Kind code	A1
Filing date	Mar 12, 2021
Priority date	Aug 4, 2017
Publication date	Sep 16, 2021
Grant date	—

Abstract

A plasma processing system includes a chamber having a coil disposed above a dielectric window for providing radio frequency power to the processing region. An etch gas delivery system is coupled to gas sources used for a first etch of a material. A liquid delivery system includes a source of liquid precursor, a liquid flow controller, and a vaporizer. A controller activates the etch gas delivery system to perform the first etch and activates the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat features with a conformal film of passivation. Each time the ALP process is completed a single atomic monolayer of the conformal film of passivation is formed. The controller activates the etch gas delivery system to perform a second etch, with the conformal film of passivation protecting the mask and sidewalls of the features during the second etch.

First claim

What is claimed is:

1 . A plasma processing system, comprising,
a chamber including a processing region; a bottom electrode disposed in the chamber below the processing region; a dielectric window disposed over the processing region and above the bottom electrode; a coil disposed above the dielectric window for providing radio frequency (RF) power to the processing region; an etch gas delivery system coupled to one or more gas sources used for performing a first etch of a material of a substrate to form features when disposed over the bottom electrode, the etch gas delivery system having an output coupled to manifolds; and a liquid delivery system including a source of liquid precursor, a liquid flow controller coupled to the source of liquid precursor, and a vaporizer coupled to the liquid flow controller, the liquid delivery system having an output coupled to said manifolds, said manifolds being controlled by a controller, wherein said controller is configured to activate the etch gas delivery system to perform said first etch and is configured to activate at least the liquid delivery system to perform an atomic layer passivation (ALP) process after said first etch to coat said features formed during said first etch with a conformal film of passivation, the ALP process being completed one or more times and each time a single atomic monolayer of said conformal film of passivation is formed, and wherein said controller is configured to activate the etch gas delivery system to perform a second etch of the features, the conformal film of passivation being configured to protect the mask and sidewalls of the features during the second etch.

2 . The plasma processing system of claim 1 , wherein the conformal film of passivation is configured to enable etching of the features to the second depth with either a) minimal critical dimension loss, or b) minimal critical dimension loading between different materials and different aspect ratios, or c) minimal profile loading between different materials and different aspect ratios.

3 . The plasma processing system of claim 1 , wherein during the ALP process, the controller is configured to activate the liquid flow controller and the vaporizer and then activate the RF power to the coil to cure an amount of precursor generated by the vaporizer and applied over the features, the RF power being activated along with an oxygen gas.

4 . The plasma processing system of claim 1 , wherein the chamber includes a vacuum system, the vacuum system being activated by the controller after each time the ALP process is completed.

5 . The plasma processing system of claim 1 , wherein a bias power is coupled to the bottom electrode during said first etching and second etching, and during a curing of an amount of precursor generated by the vaporizer and applied over the features, the bias power being set by the controller for processing said first etching, said second etching, and said ALP process.

6 . The plasma processing system of claim 1 , wherein an injector is disposed in the dielectric window, the injector providing a path coupling outputs of the manifolds to the chamber.

7 . The plasma processing system of claim 6 , wherein one or more side injectors are disposed in sidewalls of the chamber, the one or more side injectors being coupled to one or more paths to outputs of the manifolds.

8 . The plasma processing system of claim 1 , wherein the manifolds include a plurality of valves for switching between gases provided during the first etch and the second etch and vapor provided during the ALP process.

9 . The plasma processing system of claim 1 , wherein the first etch, the second etch, and the ALP process are conducted within the chamber, without removal of the substrate from the chamber, to form the conformal film of passivation that protects the sidewalls of the features during the second etch.

10 . A controller for use with a plasma processing system, comprising,
a first connection of the controller being interfaced with an etch gas delivery system; a second connection of the controller being interfaced with a liquid delivery system, wherein each of a first output of the etch gas delivery system and a second output of the liquid delivery system is connected to manifolds that are coupled to a processing region of a chamber, the manifolds being controlled by the controller; wherein the etch gas delivery system is coupled to one or more gas sources used for performing a first etch of a material of a substrate to form features when disposed over a bottom electrode of the chamber, and the liquid delivery system includes a source of liquid precursor, a liquid flow controller coupled to the source of liquid precursor, and a vaporizer coupled to the liquid flow controller, wherein the controller is configured to activate the etch gas delivery system to perform the first etch and is configured to activate at least the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat the features formed during the first etch with a conformal film of passivation, the ALP process being completed one or more times and each time a single atomic monolayer of said conformal film of passivation is formed, and wherein the controller is configured to activate the etch gas delivery system to perform a second etch of the features, the conformal film of passivation being configured to protect the mask and sidewalls of the features during the second etch.

11 . The controller of claim 10 , wherein the chamber includes a bottom electrode disposed below the processing region;
a dielectric window disposed over the processing region and above the bottom electrode; and a coil disposed above a dielectric window for providing radio frequency (RF) power to the processing region.

12 . The controller of claim 11 , wherein the chamber further includes a vacuum system, and the controller is configured to activate the vacuum system after each time the ALP process is completed.

13 . The controller of claim 11 , wherein during the ALP process, the controller is configured to activate the liquid flow controller and the vaporizer and then activate the RF power to the coil to cure an amount of precursor generated by the vaporizer and applied over the features, the RF power being activated along with an oxygen gas.

14 . The controller of claim 10 , wherein the manifolds include a plurality of valves for switching between gases provided during the first etch and the second etch and vapor provided during the ALP process, and the controller is configured to control operation of the plurality of valves.

15 . The controller of claim 11 , wherein a bias power is coupled to the bottom electrode during the first etch and the second etch, and during a curing of an amount of precursor generated by the vaporizer and applied over the features, the bias power being set by the controller for processing the first etch, the second etch, and the ALP process.

Assignees

• Lam Res Corp

Inventors

• Zhou Xiang
• Kamp Tom A
• Kimura Yoshie
• Zhang Duming
• Xu Chen
• Drewery John
• Paterson Alex

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/244 Primary

  comprising alternated and repeated etching and passivation steps · CPC title

• H01J37/32917

  Plasma diagnostics · CPC title

• C23C16/0245

  by etching with a plasma · CPC title

• H01J37/3244

  Gas supply means · CPC title