Sidewall Protection Layer formation for Substrate Processing

Patent metadata

Field	Value
Publication number	US-2021287908-A1
Application number	US-202016819918-A
Country	US
Kind code	A1
Filing date	Mar 16, 2020
Priority date	Mar 16, 2020
Publication date	Sep 16, 2021
Grant date	—

Abstract

Substrate processing techniques are described in which an etch protection layer that is formed as part of an etch process forms in a self-limiting nature. Thus, over deposition effects are minimized, particularly in the corners of etched polygonal holes. In one embodiment, the layer being etched contains silicon and the protective layer comprises a silicon oxide (SixOy). The process may include the use of a cyclical series of etch and protective layer formation steps. In the case of a silicon oxide based protective layer, a thin protective layer of silicon oxide may be formed in a limiting and controllable manner due to the nature of the oxygen atom interaction with silicon and newly formed silicon oxide protective layers. In this manner, a polygonal hole may be formed without detrimental over deposition of a protective layer in corners of the hole.

First claim

1 . A method of etching a substrate, the method comprising:
providing the substrate with a patterned layer and an underlying layer; etching a portion of the underlying layer to form exposed sidewalls of the underlying layer; exposing the substrate to a protective layer formation plasma, the protective layer formation plasma reacting with the exposed sidewalls of the underlying layer to form a self-limiting protective layer comprised of a first material provided from the protective layer formation plasma and a second material provided from the underlying layer, the protective layer formation plasma reacting with the exposed sidewalls of the underlying layer to also release a reaction by-product, the reaction by-product being a volatile gas based on a component of the protective layer formation plasma; cyclically repeating the etching of the underlying layer and the exposing the substrate to the protective layer formation plasma; and wherein the cyclically repeating provides for etching a pattern of the patterned layer in the underlying layer by utilizing the self-limiting protective layer to avoid over deposition of materials on the exposed sidewalls of the underlying layer.

2 . The method of claim 1 , wherein the underlying layer comprises silicon.

3 . The method of claim 2 , wherein the self-limiting protective layer comprises silicon oxide.

4 . The method of claim 3 , wherein the reaction by-product comprises oxygen.

5 . (canceled)

6 . The method of claim 1 , wherein the self-limiting protective layer is 10 nm or less thick.

7 . The method of claim 1 , wherein the self-limiting protective layer is 2 nm or less thick.

8 . The method of claim 1 , wherein the pattern of the patterned layer is a via hole or contact hole.

9 . The method of claim 8 , the via hole or contact hole is a square or a rectangle.

10 . The method of claim 9 , wherein the cyclically repeating the etching and exposing is configured to optimize throughput and structure profile.

11 . The method of claim 10 , wherein the method is optimized by controlling oxidation time, oxygen pressure, and oxygen flowrate.

12 . A method of etching a substrate, the method comprising:
providing the substrate with a patterned layer having a first pattern, the substrate also having a silicon layer; and etching the silicon layer to form a silicon patterned layer having a silicon layer pattern corresponding to the first pattern; the etching the silicon layer comprising a cyclical plasma process, the cyclical plasma process comprising:
exposing the substrate to a first plasma, the first plasma comprising oxygen, the first plasma reacting with at least some exposed surfaces of the silicon layer to form silicon oxide on the at least some exposed surfaces of the silicon layer, the at least some exposed surfaces comprising non-sidewall regions and sidewalls;
exposing the substrate to a second plasma, the second plasma etching portions of the silicon layer and removing the silicon oxide located on non-sidewall regions of the silicon layer, the second plasma being formed using an etchant gas and an inert gas, the inert gas assisting in removing the silicon oxide located on the non-sidewall regions of the silicon layer on which the silicon oxide was formed;
wherein the silicon oxide protects the sidewalls of the silicon layer from the second plasma; and
repeating the exposing the substrate to the first plasma and the exposing the substrate to the second plasma.

13 .- 14 . (canceled)

15 . The method of claim 12 , wherein the etchant gas comprises chlorine, hydrogen chloride, hydrogen bromide, or silicon fluorine.

16 . The method of claim 12 , wherein a formation rate of the silicon oxide in the first plasma decreases with respect to time of the exposing the substrate to a first plasma step.

17 .- 18 . (canceled)

19 . The method of claim 16 , wherein the silicon oxide on at least sidewalls of the silicon layer is 10 nm or less thick.

20 . The method of claim 16 , wherein the silicon oxide on at least sidewalls of the silicon layer is 2 nm or less thick.

21 . The method of claim 12 , wherein the silicon oxide on at least sidewalls of the silicon layer is 10 nm or less thick.

22 . The method of claim 12 , wherein the silicon oxide on at least sidewalls of the silicon layer is 2 nm or less thick.

23 . The method of claim 12 , wherein the first plasma is an oxygen plasma formed in a plasma chamber using an oxygen flow rate of about 500 standard cubic centimeters per minute, about 200 Watts power of 60 megahertz, and a pressure of about 50 mTorr.

24 . The method of claim 3 , wherein the protective layer formation plasma is an oxygen plasma formed in a plasma chamber using an oxygen flow rate of about 500 standard cubic centimeters per minute, about 200 Watts power of 60 megahertz, and a pressure of about 50 mTorr.

25 . A method, comprising:
providing a substrate with a patterned layer and an underlying layer; and etching, according to the patterned layer, the underlying layer to form holes in the underlying layer; wherein etching the underlying layer comprises a cyclical plasma process, the cyclical plasma process comprising:
in a first plasma step, forming a protective layer on at least some exposed surfaces of the underlying layer by exposing the substrate to a first plasma, the first plasma reacting with the at least some exposed surfaces of the underlying layer to form the protective layer, the at least some exposed surfaces comprising sidewall surfaces of the holes and top surfaces of the underlying layer at respective bottoms of the holes formed in the underlying layer;
in a second plasma step, removing the protective layer from the top surfaces of the underlying layer at the respective bottoms of the holes and etching portions of the underlying layer by exposing the substrate to a second plasma, the second plasma being formed using an etchant gas and an inert gas, the inert gas assisting in directionally etching the protective layer formed on the top surfaces of the underlying layer at the respective bottoms of the holes, the protective layer protecting the sidewalls of the holes from etching by the second plasma; and
repeating the exposing the substrate to the first plasma and the exposing the substrate to the second plasma.

26 . The method of claim 25 , wherein:
the underlying layer comprises silicon; the first plasma comprises oxygen; and the protective layer comprises silicon oxide.

27 . The method of claim 26 , wherein:
the first plasma is generated from oxygen gas; and the first plasma reacts with the sidewall surfaces of the at least some exposed surfaces of the underlying layer to also release, as a reaction by-product, oxygen atoms as radicals or oxygen gas.

Assignees

• Tokyo Electron Ltd

Inventors

• Tsai Yu-Hao
• Wang Mingmei

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P50/244 Primary

  comprising alternated and repeated etching and passivation steps · CPC title

• H01L21/02238

  Electricity · mapped topic

• H01L21/02164

  Electricity · mapped topic