Selective in-situ carbon-based mask protection
US-2025308895-A1 · Oct 2, 2025 · US
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Wang Mingmei patents
Wang Mingmei is listed as an inventor on 54 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Mingmei |
| Total patents | 54 |
| First publication | Mar 19, 2015 |
| Latest publication | Oct 2, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Plasma assisted metal oxide reduction
US-2025300007-A1 · Sep 25, 2025 · US
Method to selectively etch silicon nitride to silicon oxide using water crystallization
US-12424447-B2 · Sep 23, 2025 · US
Method for etching for semiconductor fabrication
US-12400863-B2 · Aug 26, 2025 · US
In-situ adsorbate formation for plasma etch process
US-12308212-B2 · May 20, 2025 · US
Etch process for oxide of alkaline earth metal
US-12237172-B2 · Feb 25, 2025 · US
Atomic Layer Deposition of Passivation Layer
US-2025046603-A1 · Feb 6, 2025 · US
Plasma processing system and method using radio frequency and microwave power
US-12131887-B2 · Oct 29, 2024 · US
Selective etching with fluorine, oxygen and noble gas containing plasmas
US-12131914-B2 · Oct 29, 2024 · US
High aspect ratio contact etching with additive gas
US-2024332029-A1 · Oct 3, 2024 · US
Recent patents
Latest publications not already listed above.
Sidewall Inorganic Passivation for Dielectric Etching Via Surface Modification
US-2024162043-A1 · May 16, 2024 · US
Method to selectively etch silicon nitride to silicon oxide using water crystallization
US-2024128089-A1 · Apr 18, 2024 · US
In-Situ Adsorbate Formation for Plasma Etch Process
US-2024112887-A1 · Apr 4, 2024 · US
Low-Temperature Etch
US-2024112919-A1 · Apr 4, 2024 · US
In-Situ Adsorbate Formation for Dielectric Etch
US-2024112888-A1 · Apr 4, 2024 · US
Methods for forming semiconductor devices with isolation structures
US-2024071808-A1 · Feb 29, 2024 · US
Plasma surface treatment for wafer bonding methods
US-2024071746-A1 · Feb 29, 2024 · US
Plasma processing system and method using radio frequency (RF) and microwave power
US-11887815-B2 · Jan 30, 2024 · US
Methods of patterning small features
US-11837471-B2 · Dec 5, 2023 · US
Etch process for oxide of alkaline earth metal
US-2023374670-A1 · Nov 23, 2023 · US
High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
US-11804380-B2 · Oct 31, 2023 · US
Method for etching for semiconductor fabrication
US-2023307242-A1 · Sep 28, 2023 · US
Focus Ring Regeneration
US-2023081862-A1 · Mar 16, 2023 · US
Cyclic plasma etching of carbon-containing materials
US-11538692-B2 · Dec 27, 2022 · US
Cyclic Plasma Etching Of Carbon-Containing Materials
US-2022375759-A1 · Nov 24, 2022 · US
Plasma Processing System And Method Using Radio Frequency And Microwave Power
US-2022246402-A1 · Aug 4, 2022 · US
Plasma Processing System and Method Using Radio Frequency (RF) and Microwave Power
US-2022246386-A1 · Aug 4, 2022 · US
Selective Etching with Fluorine, Oxygen and Noble Gas Containing Plasmas
US-2022199418-A1 · Jun 23, 2022 · US
Conformal amorphous carbon layer etch with side-wall passivation
US-2022199410-A1 · Jun 23, 2022 · US
High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
US-2022157615-A1 · May 19, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Tokyo Electron Ltd | 52 |
| Univ Orleans | 2 |
| Globalfoundries Inc | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P50/283 | 37 |
| H01L21/31116 | 21 |
| H10P50/73 | 16 |
| H10P50/242 | 15 |
| H10P50/244 | 13 |