Methods and Apparatus for Cryogenic Gas Stream Assisted SAM-based Selective Deposition

Patent metadata

Field	Value
Publication number	US-2021283650-A1
Application number	US-202117335829-A
Country	US
Kind code	A1
Filing date	Jun 1, 2021
Priority date	Jan 8, 2018
Publication date	Sep 16, 2021
Grant date	—

Abstract

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

First claim

What is claimed is:

1 . A processing chamber comprising:
a chamber body having a bottom and sidewall; a gas distribution assembly having a front surface to provide a flow of gas into an interior of the processing chamber; a susceptor located within the interior of the processing chamber, the susceptor having a top surface facing the front surface of the gas distribution assembly, the top surface of the susceptor and front surface of the gas distribution assembly defining a process volume; and a high-speed cryogenic gas nozzle having an outlet directed to provide a cryogenic gas stream into the process volume, the cryogenic gas stream having a spray pattern so that when a substrate is present in the process volume, the spray pattern has a spray area on the substrate.

2 . The processing chamber of claim 1 , wherein the high-speed cryogenic gas nozzle is configured to provide the cryogenic gas stream into the process volume with a root mean square velocity greater than or equal to about 340 m/s.

3 . The processing chamber of claim 2 , wherein the root mean square velocity is in the range of about 350 m/s to about 1750 m/s.

4 . The processing chamber of claim 1 , wherein the cryogenic gas stream is movable relative to the top surface of the susceptor.

5 . The processing chamber of claim 4 , wherein the top surface of the susceptor remains relatively fixed while the cryogenic gas stream is moved.

6 . The processing chamber of claim 5 , further comprising at least one actuator to move the high-speed cryogenic gas nozzle.

7 . The processing chamber of claim 6 , further comprising a controller configured to control the at least one actuator.

8 . The processing chamber of claim 1 , wherein the spray area is greater than or equal to about 0.5 cm 2 .

9 . The processing chamber of claim 1 , further comprising a cryogenic gas supply conduit connected to the high-speed cryogenic gas nozzle.

10 . The processing chamber of claim 9 , wherein the cryogenic gas supply conduit has a metallic interior surface.

11 . The processing chamber of claim 1 , wherein the high-speed cryogenic gas nozzle is a converging-diverging nozzle.

12 . The processing chamber of claim 1 , wherein the susceptor rotates a substrate about a central axis.

13 . The processing chamber of claim 12 , wherein a controller moves the high-speed cryogenic gas nozzle so that a residence time of the cryogenic gas stream is substantially uniform over the range of movement of the high-speed cryogenic gas nozzle.

14 . The processing chamber of claim 12 , wherein the high-speed cryogenic gas nozzle has a variable focus and the spray area near the central axis is smaller than the spray area away from the central axis.

15 . The processing chamber of claim 1 , wherein the spray pattern is round.

16 . The processing chamber of claim 1 , wherein the spray pattern is ovoid.

17 . The processing chamber of claim 1 , wherein the spray pattern is rectangular.

18 . The processing chamber of claim 17 , wherein the spray pattern is square.

Assignees

• Applied Materials Inc

Inventors

• Ke Chang
• Suh Song-Moon
• Wu Liqi
• Jackson Michael S
• Zhou Lei
• Liu Biao
• Pan Cheng
• Ma Paul F
• Chang Mei

Classifications

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6512

  by exposure to a gas or vapour · CPC title