Substrate processing apparatus, substrate processing method, and storage medium storing program for executing substrate processing method

Patent metadata

Field	Value
Publication number	US-2021217620-A1
Application number	US-201816769179-A
Country	US
Kind code	A1
Filing date	Dec 7, 2018
Priority date	Dec 7, 2017
Publication date	Jul 15, 2021
Grant date	—

Abstract

A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.

First claim

1 - 13 . (canceled)

14 . A substrate processing apparatus for removing a deposit on a substrate from the substrate, comprising:
a removal processing part including a first processing liquid supply part configured to supply the substrate with a first processing liquid containing a removing agent for the deposit, a solvent having a boiling point lower than a boiling point of the removing agent, and a thickener, a second processing liquid supply part configured to supply a second processing liquid for forming a gas diffusion barrier film on the substrate to which the first processing liquid is supplied, a substrate heating part configured to heat the substrate, to which the second processing liquid is supplied, at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent, and a rinsing liquid supply part configured to supply a rinsing liquid to the substrate; and a controller configured to control the first processing liquid supply part, the second processing liquid supply part, the substrate heating part, and the rinsing liquid supply part so that the first processing liquid supply part supplies the first processing liquid to the substrate, subsequently, the second processing liquid supply part supplies the second processing liquid to the substrate, and subsequently, the substrate heating part heats the substrate at the predetermined temperature, so as to promote evaporation of the solvent and reaction between the deposit and the removing agent, and so that the rinsing liquid supply part supplies the rinsing liquid to the substrate, so as to remove the deposit from the substrate, wherein the gas diffusion barrier film prevents a gaseous reactive product generated by the reaction between the deposit and the removing agent from diffusing around the substrate.

15 . The apparatus of claim 14 , wherein the gas diffusion barrier film contains an organic polymer.

16 . The apparatus of claim 15 , wherein the organic polymer is a phenolic polymer or an acrylic polymer.

17 . The apparatus of claim 16 , wherein the removing agent includes hydrochloric acid or tetramethylammonium.

18 . The apparatus of claim 16 , wherein at least two of the first processing liquid supply part, the second processing liquid supply part, the substrate heating part, and the rinsing liquid supply part are accommodated in a same chamber.

19 . The apparatus of claim 15 , wherein the removing agent includes hydrochloric acid or tetramethylammonium.

20 . The apparatus of claim 15 , wherein at least two of the first processing liquid supply part, the second processing liquid supply part, the substrate heating part, and the rinsing liquid supply part are accommodated in a same chamber.

21 . The apparatus of claim 14 , wherein the removing agent includes hydrochloric acid or tetramethylammonium.

22 . The apparatus of claim 21 , wherein at least two of the first processing liquid supply part, the second processing liquid supply part, the substrate heating part, and the rinsing liquid supply part are accommodated in a same chamber.

23 . The apparatus of claim 21 , wherein the deposit is a hard mask film for etching.

24 . The apparatus of claim 14 , wherein at least two of the first processing liquid supply part, the second processing liquid supply part, the substrate heating part, and the rinsing liquid supply part are accommodated in a same chamber.

25 . The apparatus of claim 14 , wherein the deposit is a hard mask film for etching.

26 . A substrate processing method of removing a deposit on a substrate from the substrate, the method comprising:
(A) supplying to the substrate a first processing liquid containing a removing agent for the deposit, a solvent having a boiling point lower than a boiling point of the removing agent, and a thickener; (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film; (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent; and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate, wherein the gas diffusion barrier film prevents a gaseous reactive product generated by the reaction between the deposit and the removing agent in (C) from diffusing around the substrate.

27 . The method of claim 26 , wherein the gas diffusion barrier film contains an organic polymer.

28 . The method of claim 27 , wherein the organic polymer is a phenolic polymer or an acrylic polymer.

29 . The method of claim 26 wherein the organic polymer is a phenolic polymer or an acrylic polymer.

30 . The method of claim 26 , wherein the removing agent includes hydrochloric acid or tetramethylammonium.

31 . The method of claim 26 , wherein at least two of (A) to (D) are performed inside a same chamber.

32 . The method of claim 26 , wherein the deposit is a hard mask film for etching.

33 . A storage medium storing a program that, when executed by a computer for controlling an operation of a substrate processing apparatus, causes the computer to control the substrate processing apparatus to execute the substrate processing method of claim 26 .

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Toshima Takayuki

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P50/269

  pre- or post-treatments, e.g. anti-corrosion processes · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title