Semiconductor device manufacturing method, curable resin composition for temporary fixation material, film for temporary fixation material, and laminated film for temporary fixation material

Patent metadata

Field	Value
Publication number	US-2020399506-A1
Application number	US-201816767908-A
Country	US
Kind code	A1
Filing date	Nov 29, 2018
Priority date	Dec 1, 2017
Publication date	Dec 24, 2020
Grant date	—

Abstract

Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

First claim

1 . A semiconductor device manufacturing method, the method comprising:
a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order; and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

2 . The semiconductor device manufacturing method according to claim 1 , wherein a light source for the incoherent light in the separation step is a xenon lamp.

3 . The semiconductor device manufacturing method according to claim 1 , wherein the incoherent light in the separation step is light including at least infrared light.

4 . The semiconductor device manufacturing method according to claim 1 , wherein the separation step is a step of irradiating the temporary fixation material layer with the incoherent light through the supporting member.

5 . The semiconductor device manufacturing method according to claim 1 , wherein the temporary fixation material layer contains a cured product of a curable resin composition including electroconductive particles that generate heat upon absorbing light.

6 . The semiconductor device manufacturing method according to claim 5 , wherein a content of the electroconductive particles is 30 to 90 parts by mass with respect to a total amount of 100 parts by mass of components other than the electroconductive particles in the curable resin composition.

7 . The semiconductor device manufacturing method according to claim 5 , wherein the curable resin composition further includes a thermoplastic resin.

8 . The semiconductor device manufacturing method according to claim 5 , wherein the curable resin composition further includes a polymerizable monomer and a polymerization initiator.

9 . The semiconductor device manufacturing method according to claim 1 , wherein the temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light.

10 . The semiconductor device manufacturing method according to claim 9 , wherein the light absorbing layer is formed by sputtering or vacuum vapor deposition.

11 . A curable resin composition for a temporary fixation material for temporarily fixing a semiconductor member to a supporting member,
the curable resin composition for a temporary fixation material including electroconductive particles that generate heat upon absorbing light.

12 . The curable resin composition for a temporary fixation material according to claim 11 , wherein a content of the electroconductive particles is 30 to 90 parts by mass with respect to a total amount of 100 parts by mass of components other than the electroconductive particles in the curable resin composition for a temporary fixation material.

13 . The curable resin composition for a temporary fixation material according to claim 11 , further comprising a thermoplastic resin.

14 . The curable resin composition for a temporary fixation material according to claim 13 , further comprising a polymerizable monomer and a polymerization initiator.

15 . A film for a temporary fixation material for temporarily fixing a semiconductor member to a supporting member,
the film for a temporary fixation material comprising the curable resin composition for a temporary fixation material according to claim 11 .

16 . A laminated film for a temporary fixation material for temporarily fixing a semiconductor member to a supporting member,
the laminated film for a temporary fixation material comprising a light absorbing layer that generates heat upon absorbing light.

17 . The semiconductor device manufacturing method according to claim 9 , wherein the temporary fixation material layer further has a resin cured product layer including a cured product of a curable resin component.

18 . The laminated film for a temporary fixation material according to claim 16 , further comprising a resin layer including a curable resin component.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Miyazawa Emi
• Hayasaka Tsuyoshi
• Kawamori Takashi
• Sukata Shinichiro
• Inaba Yoshihito
• NISHIDO Keisuke

Classifications

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/014

  using batch processing · CPC title