Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer

Patent metadata

Field	Value
Publication number	US-2016093522-A1
Application number	US-201514848096-A
Country	US
Kind code	A1
Filing date	Sep 8, 2015
Priority date	Sep 26, 2014
Publication date	Mar 31, 2016
Grant date	—

Abstract

A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and back surface to be processed, wherein the temporary adhesive material layer includes a complex temporary adhesive material layer having two-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support. A temporary adhesive material for a wafer processing which withstand a thermal process at high temperature exceeding 300° C., facilitating temporary adhesion and delamination.

First claim

1 . A wafer processing laminate comprising a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and a back surface to be processed, wherein
the temporary adhesive material layer comprises a complex temporary adhesive material layer having a two-layered structure that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support.

2 . The wafer processing laminate according to claim 1 , wherein the film thickness of the first temporary adhesive layer is from 1 to 80 nm.

3 . The wafer processing laminate according to claim 1 , wherein the thermoplastic organopolysiloxane polymer layer (A) is an unreactive organopolysiloxane layer containing 99.000 to 99.999 mol % of a siloxane unit (D unit) represented by R 11 R 12 SiO 2/2 , 1.000 to 0.001 mol % of a siloxane unit (M unit) represented by R 13 R 14 R 15 SiO 1/2 , and 0.000 to 0.500 mol % of a siloxane unit (T unit) represented by R 16 SiO 3/2 , where R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 each represent an unsubstituted or substituted monovalent hydrocarbon group, having a weight average molecular weight of 200,000 to 1,000,000, and containing 0.5% by mass or less of a low molecular weight component having a molecular weight of 740 or less.

4 . The wafer processing laminate according to claim 2 , wherein the thermoplastic organopolysiloxane polymer layer (A) is an unreactive organopolysiloxane layer containing 99.000 to 99.999 mol % of a siloxane unit (D unit) represented by R 11 R 12 SiO 2/2 , 1.000 to 0.001 mol % of a siloxane unit (M unit) represented by R 13 R 14 R 15 SiO 1/2 , and 0.000 to 0.500 mol % of a siloxane unit (T unit) represented by R 16 SiO 3/2 , where R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 each represent an unsubstituted or substituted monovalent hydrocarbon group, having a weight average molecular weight of 200,000 to 1,000,000, and containing 0.5% by mass or less of a low molecular weight component having a molecular weight of 740 or less.

5 . The wafer processing laminate according to claim 1 , wherein the thermosetting siloxane-modified polymer layer (B) is a layer of a composition containing 100 parts by mass of a siloxane bond-containing polymer having a repeating unit represented by the following general formula (1) and a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by mass of one or more crosslinkers selected from the group consisting of an amino condensate, a melamine resin, a urea resin each modified with formalin or formalin-alcohol, a phenol compound having on average two or more methylol or alkoxymethylol groups per molecule, and an epoxy compound having on average two or more epoxy groups per molecule,

wherein R 1 to R 4 may be the same or different, and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; B is a positive number; A is 0 or a positive number; and X is a divalent organic group represented by the following general formula (2),

wherein Z represents a divalent organic group selected from any of

N represents 0 or 1; R 5 and R 6 each represent an alkyl or alkoxy group having 1 to 4 carbon atoms, and may be the same or different from each other; and “k” represents any of 0, 1, and 2.

6 . The wafer processing laminate according to claim 1 , wherein the thermosetting siloxane-modified polymer layer (B) is a layer of a composition containing 100 parts by mass of a siloxane bond-containing polymer having a repeating unit represented by the following general formula (3) and a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by mass of one or more crosslinkers selected from the group consisting of a phenol compound having on average two or more phenol groups per molecule and an epoxy compound having on average two or more epoxy groups per molecule,

wherein R 1 to R 4 may be the same or different, and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; B is a positive number; A is 0 or a positive number; and Y is a divalent organic group represented by the following general formula (4),

wherein V represents a divalent organic group selected from any of

“p” represents 0 or 1; R 7 and R 8 each represent an alkyl or alkoxy group having 1 to 4 carbon atoms, and may be the same or different from each other; and “h” represents any of 0, 1, and 2.

7 . The wafer processing laminate according to claim 1 , wherein in a state that the thermosetting siloxane-modified polymer layer (B) is laminated to the thermoplastic organopolysiloxane polymer layer (A), the polymer layer (A) exhibits 1 to 50 gf of a peeing force when the polymer layer (B) is peeled from the polymer layer (A) after heat curing, wherein the peeling force is measured by 180° peeling using a test piece having a width of 25 mm.

8 . A method for manufacturing a thin wafer comprising the steps of:
(a) bonding a support to a circuit-forming front surface of a wafer that has the circuit-forming front surface and a non-circuit-forming back surface through a complex temporary adhesive material layer used for the wafer processing laminate according to claim 1 , the complex temporary adhesive material layer including the thermoplastic organopolysiloxane polymer layer (A) and the thermosetting siloxane-modified polymer layer (B), wherein the bonding is performed by bonding the support formed with the thermosetting siloxane-modified polymer layer (B) to the circuit-attached wafer formed with the polymer layer (A) under vacuum; (b) heat curing the polymer layer (B); (c) grinding or polishing the non-circuit-forming back surface of the wafer bonded to the support; (d) processing the non-circuit-forming back surface of the wafer; and (e) delaminating the support and the thermosetting siloxane-modified polymer layer (B) laminated to the support together from the processed wafer.

9 . A method for manufacturing a thin wafer comprising the steps of:
(a) bonding a support to a circuit-forming front surface of a wafer that has the circuit-forming front surface and a non-circuit-forming back surface through a complex temporary adhesive material layer used for the wafer processing laminate according to claim 2 , the complex temporary adhesive material layer including the thermoplastic organopolysiloxane polymer layer (A) and the thermosetting siloxane-modified polymer layer (B), wherein the bonding is performed by bonding the support formed with the thermosetting siloxane-modified polymer layer (B) to the circuit-attached wafer formed with the polymer layer (A) under vacuum; (b) heat curing t

Assignees

• Shinetsu Chemical Co

Inventors

• Tagami Shohei
• Sugo Michihiro
• Tanabe Masahito
• Kato Hideto

Classifications

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title