Metal or metal alloy deposition composition and plating compound

Patent metadata

Field	Value
Publication number	US-2020340132-A1
Application number	US-201816961940-A
Country	US
Kind code	A1
Filing date	Dec 14, 2018
Priority date	Jan 16, 2018
Publication date	Oct 29, 2020
Grant date	—

Abstract

The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.

First claim

1 . A metal or metal alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, comprising
a) at least one type of metal ions to be deposited, b) at least one plating compound comprising at least one structural unit represented by formula (1)

wherein
each R 1 and R 2 are independently selected from the group consisting of hydrogen and alkyl group;
each X 1 and X 2 are independently selected from the group consisting of
a structural unit represented by formula (X-1)

wherein
Y 1 is an alkanediyl group;
each R 11 is independently selected from the group consisting of hydrogen, alkyl group, aryl group, and alkaryl group;
b is an integer ranging from 1 to 10;

and
a structural unit represented by formula (X-2)

wherein
R 21 , R 22 , R 23 , R 24 and R 25 are independently selected from the group consisting of hydrogen, alkyl group, aryl group and alkaryl group;
c is an integer selected from 1, 2, 3, 4, 5 and 6;
d is an integer selected from 1 and 2;
e is an integer selected from 1, 2, 3, 4, 5 and 6;

with the proviso that at least one of X 1 and X 2 is a structural unit represented by formula (X-1);
and a is an integer ranging from 1 to 10.

2 . The metal or metal alloy deposition composition of claim 1 characterized in that R 1 and R 2 are independently selected from the group consisting of hydrogen and C1-C4-alkyl group.

3 . The metal or metal alloy deposition composition of claim 1 characterized in that Y 1 is a C1-C12-alkanediyl.

4 . The metal or metal alloy deposition composition of claim 1 characterized in that R 11 is selected from the group consisting of hydrogen, C1-C4-alkyl group and phenyl group.

5 . The metal or metal alloy deposition composition of claim 1 characterized in that integer a ranges from 1 to 8.

6 . The metal or metal alloy deposition composition of claim 1 characterized in that integer b ranges from 1 to 6.

7 . The metal or metal alloy deposition composition of claim 1 characterized in that R 21 , R 22 , R 23 , R 24 and R 25 are independently selected from the group consisting of hydrogen and C1-C4-alkyl group.

8 . The metal or metal alloy deposition composition of claim 1 characterized in that the plating compound is represented by formula (2)

wherein
R 3 and R 4 are independently selected from the group consisting of hydrogen and alkyl group; and
X 3 is selected from the group consisting of a structural unit represented by formula (X-1) and a structural unit represented by formula (X-2).

9 . The metal or metal alloy deposition composition of claim 1 characterized in that X 1 and X 2 are both structural units represented by formula (X-1).

10 . The metal or metal alloy deposition composition of claim 9 characterized in that X 1 and X 2 are structurally different.

11 . The metal or metal alloy deposition composition of claim 1 characterized in that a first one of X 1 or X 2 is a structural unit represented by formula (X-1) and a second one of X 1 or X 2 is a structural unit represented by formula (X-2).

12 . A method for electrolytic deposition of a metal or metal alloy layer, particularly of a copper or copper alloy layer, on at least one surface of a substrate comprising the steps
(i) providing the substrate having the at least one surface; (ii) contacting the at least one surface of the substrate with a metal or metal alloy deposition composition according to claim 1 ; (iii) applying an electrical current between the substrate and at least one anode; and thereby depositing a metal or metal alloy layer on the at least one surface of the substrate.

13 . A plating compound for use in a metal or metal alloy electrolytic deposition composition, characterized in that the plating compound is as defined in claim 1 .

14 . (canceled)

15 . A method for preparation of the plating compound of claim 13 , comprising the steps
(A) providing at least one imidazole compound represented by formula (IM)

wherein R IM is selected from the group consisting of hydrogen and alkyl group;
(B) treating the imidazole compound with a base suitable to abstract a hydrogen ion from the imidazole compound such that an anionic imidazole compound is formed;
(C) reacting said anionic imidazole compound with at least one first dielectrophile selected from the group consisting of
a compound represented by formula (D1)

wherein
Y D11 is an alkanediyl group;
each R D11 is independently selected from the group consisting of hydrogen, alkyl group, aryl group and alkaryl group;
L D11 and L D12 are independently leaving groups suitable to be replaced by nucleophilic substitution;
f is an integer ranging from 1 to 10;

a compound represented by formula (D2)

wherein
Y D21 is an alkanediyl group;
L D21 is a leaving group suitable to be replaced by nucleophilic substitution;

a compound represented by formula (D3)

wherein
R D31 , R D32 , R D33 , R D34 and R D35 are independently selected from the group consisting of hydrogen, alkyl group, aryl group and alkaryl group;
L D31 and L D32 are independently leaving groups suitable to be replaced by nucleophilic substitution;
h is an integer selected from 1, 2, 3, 4, 5 and 6;
i is an integer selected from 1 and 2;
j is an integer selected from 1, 2, 3, 4, 5 and 6;

and
a compound represented by formula (D4)

and thereby forming an intermediate; and
(D) reacting said intermediate with at least one second dielectrophile selected from the group consisting of
a compound represented by formula (E1)

wherein
Y E11 is an alkanediyl group;
R E11 is independently selected from the group consisting of hydrogen, alkyl group, aryl group and alkaryl group;
L E11 and L E12 are independently leaving groups suitable to be replaced by nucleophilic substitution;
k is an integer ranging from 1 to 10;

a compound r

Assignees

• Atotech Deutschland Gmbh

Inventors

• Llavona-Serrano Angela
• Bangerter Timo
• Mann Olivier
• Cebulla Pamela
• Ackermann Stefanie
• Brunner Heiko
• Haubner Kinga
• Froese Bernd

Classifications

• C08G65/3318

  heterocyclic · CPC title

• C25D3/12

  of nickel or cobalt · CPC title

• C25D3/32

  characterised by the organic bath constituents used · CPC title

• C25D3/567

  containing more than 50% by weight of platinum group metals · CPC title

• C25D3/52

  characterised by the organic bath constituents used · CPC title