Potassium sodium niobate sputtering target

Patent metadata

Field	Value
Publication number	US-2020340096-A1
Application number	US-202016842896-A
Country	US
Kind code	A1
Filing date	Apr 8, 2020
Priority date	Apr 26, 2019
Publication date	Oct 29, 2020
Grant date	—

Abstract

A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.

First claim

We claim:

1 . A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added, wherein the dopant contained is one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and wherein a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less.

2 . The sputtering target according to claim 1 , wherein a variation coefficient of a K/Na composition ratio in a plane of the sputtering target is 0.12 or less.

3 . The sputtering target according to claim 2 , wherein a relative density is 60% or higher.

4 . The sputtering target according to claim 2 , wherein a relative density is 70% or higher.

5 . The sputtering target according to claim 2 , wherein a relative density is 80% or higher.

6 . The sputtering target according to claim 5 , wherein a flexural strength is 10 MPa or more.

7 . The sputtering target according to claim 6 , wherein an average crystal grain size is 1 to 20 μm.

8 . The sputtering target according to claim 7 , wherein a content of carbon as a gas component is 1000 wtppm or less.

9 . The sputtering target according to claim 8 , wherein a content ratio of niobium (Nb), potassium (K), and sodium (Na) is, in terms of atomic ratio, Nb:K:Na=1.0:X:1-X, where 0.3≤X<1.0.

10 . The sputtering target according to claim 9 , wherein a total content of the dopant is 0.04 at % to 4 at %.

11 . The sputtering target according to claim 1 , wherein a relative density is 60% or higher.

12 . The sputtering target according to claim 1 , wherein a relative density is 70% or higher.

13 . The sputtering target according to claim 1 , wherein a relative density is 80% or higher.

14 . The sputtering target according to claim 1 , wherein a flexural strength is 10 MPa or more.

15 . The sputtering target according to claim 1 , wherein an average crystal grain size is 1 to 20 μm.

16 . The sputtering target according to claim 1 , wherein a content of carbon as a gas component is 1000 wtppm or less.

17 . The sputtering target according to claim 1 , wherein a content ratio of niobium (Nb), potassium (K), and sodium (Na) is, in terms of atomic ratio, Nb:K:Na=1.0:X:1-X, where 0.3≤X<1.0.

18 . The sputtering target according to claim 1 , wherein a total content of the dopant is 0.04 at % to 4 at %.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Sakashita Ryosuke
• Shibuya Yoshitaka

Classifications

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C04B35/495

  based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title

• C23C14/088 Primary

  of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal · CPC title

• C23C14/08

  Oxides (C23C14/10 takes precedence) · CPC title