Thermoelectric conversion device having perovskite crystal including grain domain

US9508912B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9508912-B2
Application numberUS-201414449260-A
CountryUS
Kind codeB2
Filing dateAug 1, 2014
Priority dateFeb 1, 2012
Publication dateNov 29, 2016
Grant dateNov 29, 2016

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Abstract

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A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

First claim

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What is claimed is: 1. A thermoelectric conversion device, comprising: a substrate; a film of a compound having perovskite structure formed over the substrate; a first electrode formed over the substrate in contact to a top surface of the film at a first region; a second electrode formed in contact with the top surface of the film at a second region offset from the first region; a first heating/cooling device that heats or cools said film at the first region; and a secon…

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What does patent US9508912B2 cover?
A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.
Who is the assignee on this patent?
Fujitsu Ltd
What technology area does this patent fall under?
Primary CPC classification C23C14/088. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).