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Integrated composite perovskite oxide heterostructure
US9506153B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9506153-B2 |
| Application number | US-201414488771-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2014 |
| Priority date | Sep 17, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Abstract
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An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO 3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO 3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects. The invention enables miniature highly (voltage) tunable frequency agile devices and/or charge mediated voltage controlled magnetic devices for RF/microwave communications, RADAR, and electronic warfare applications.
First claim
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I claim: 1. A composite material comprising: a substrate, a layer of crystallized SrTiO 3 perovskite oxide overlying said substrate, a layer of doped Ba 1-x Sr x TiO 3 perovskite oxide overlying said layer of crystallized SrTiO 3 , at least one electrode overlying at least a portion of said layer of doped Ba 1-x SrTiO 3 perovskite oxide, and a further electrode interposed between at least a portion of said layer of crystallized SrTiO 3 perovskite oxide and said layer d…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9506153B2 cover?
- An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO 3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. I…
- Who is the assignee on this patent?
- U S Army Res Laboratory Attn: Rdrl-Loc-I, Us Army
- What technology area does this patent fall under?
- Primary CPC classification C23C28/042. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).