Methods for depositing thin films comprising indium nitride by atomic layer deposition

Patent metadata

Field	Value
Publication number	US-2020335342-A1
Application number	US-202016908241-A
Country	US
Kind code	A1
Filing date	Jun 22, 2020
Priority date	Jul 6, 2011
Publication date	Oct 22, 2020
Grant date	—

Abstract

Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.

First claim

We claim:

1 . A method for depositing a thin film comprising InN on a substrate in a reaction space by an atomic layer deposition (ALD) process comprising a plurality of InN deposition cycles comprising:
contacting the substrate with a vapor phase In precursor such that In precursor adsorbs on the substrate surface; and contacting the substrate with a vapor phase nitrogen reactant, such that the nitrogen reactant reacts with the adsorbed In precursor to form InN.

2 . The method of claim 1 , wherein the deposited film is an epitaxial or single-crystal film.

3 . The method of claim 1 , wherein the InN is deposited at a growth rate of less than 1.5 Å/deposition cycle.

4 . The method of claim 1 , wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization.

5 . The method of claim 1 , wherein the In precursor comprises an organic In compound.

6 . The method of claim 5 , wherein the organic In compound is cyclopentadienylindium (InCp), dimethylethylindium (DMEI), trimethylindium (TMI) or triethylindium (TEI).

7 . The method of claim 6 , wherein the organic In compound has a formula InR 3 , wherein the R is selected from substituted, branched, linear or cyclic C1-C10 hydrocarbons.

8 . The method of claim 1 , wherein the In precursor comprises an indium halide.

9 . The method of claim 8 , wherein the In precursor is InCl 3 or InI 3 .

10 . The method of claim 1 , wherein the nitrogen reactant does not comprise an activated compound.

11 . The method of claim 1 , wherein the nitrogen reactant comprises nitrogen plasma.

12 . The method of claim 11 , wherein the nitrogen plasma is formed remotely.

13 . The method of claim 11 , wherein the nitrogen plasma is formed in situ.

14 . The method of claim 11 , wherein the nitrogen plasma does not have substantial amount of N ions when it contacts the substrate.

15 . The method of claim 11 , wherein the nitrogen reactant further comprises hydrogen plasma.

16 . The method of claim 11 , wherein the InN thin film is deposited at a temperature below 200° C.

17 . The method of claim 1 , further comprising a GaN deposition cycle thereby depositing a GaInN film.

18 . The method of claim 1 , wherein the ALD process is a thermal ALD process.

19 . The method of claim 1 , wherein the thin film is deposited at a temperature below 400° C.

20 . The method of claim 1 , wherein the reaction chamber is part of a flow-type reactor.

Assignees

• Asm Int Nv

Inventors

• Haukka Suvi
• Pore Viljami J
• Niskanen Antti

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3416 Primary

  Nitrides · CPC title

• C23C16/4554

  Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · CPC title

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title