Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program

Patent metadata

Field	Value
Publication number	US-2020333766-A1
Application number	US-202016921652-A
Country	US
Kind code	A1
Filing date	Jul 6, 2020
Priority date	Dec 7, 2012
Publication date	Oct 22, 2020
Grant date	—

Abstract

The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device comprising:
transferring a substrate to a process chamber including an inner tube and an outer tube; executing a STABLE period by cooling the substrate transferred to the process chamber while heating the substrate from its outer peripheral side; executing a DEPOSITION period by supplying a process gas to the process chamber during the executing the STABLE period; and stopping an operation of the cooling the substrate during the supplying of the process gas by executing the DEPOSITION period after the STABLE period, wherein during the STABLE period, a temperature on the outer peripheral side of the substrate is stabilized to be lower than a temperature on a central side of the substrate by a predetermined temperature, wherein after the STABLE period, the operation of the cooling the substrate and an operation of the supplying the process gas are executed simultaneously from a start of the DEPOSITION period for a specific time period, wherein after the specific time period, the operation of the cooling the substrate is stopped to increase a temperature inside the outer tube, and then an operation of the heating the substrate is stopped to increase heat transfer from the process chamber to its outside such that a detected temperature of the outer peripheral side of the substrate decreases faster than a detected temperature of the central side of the substrate decreases during the DEPOSITION period, and wherein a difference between the detected temperature of the outer peripheral side of the substrate and the detected temperature of the central side of the substrate is reduced by stopping the operation of the cooling the substrate and the operation of the heating the substrate during the DEPOSITION period.

2 . The method of claim 1 , wherein the process gas starts to be supplied into the process chamber when the STABLE period is being executed.

3 . The method of claim 1 , wherein the process gas is supplied into the process chamber concurrently with a timing of starting the DEPOSITION period.

4 . The method of claim 1 , further comprising performing a control such that the operation of the heating the substrate, the operation of the cooling the substrate, and the operation of the supplying the process gas are executed alternately and repeatedly a predetermined number of times.

5 . The method of claim 1 , wherein the process gas is supplied into the process chamber at a timing that is different from a timing of starting the DEPOSITION period.

6 . The method of claim 1 , further comprising:
controlling at least a temperature of the substrate; and performing a feedback control during the operation of the heating the substrate.

7 . A method of manufacturing a semiconductor device comprising:
transferring a substrate to a process chamber; executing a STABLE period by cooling the substrate transferred to the process chamber while heating the substrate from its outer peripheral side; executing a DEPOSITION period by supplying a process gas to the process chamber during the executing the STABLE period; and stopping an operation of the cooling the substrate during the supplying the process gas by executing the DEPOSITION period after the STABLE period, wherein during the STABLE period, a temperature on the outer peripheral side of the substrate is stabilized to be lower than a temperature on a central side of the substrate by a predetermined temperature, wherein after the STABLE period, the operation of the cooling the substrate and an operation of the supplying the process gas are executed simultaneously from a start of the DEPOSITION period for a specific time period, wherein after the specific time period, the operation of the cooling the substrate is stopped to increase a temperature inside the process chamber, and then an operation of the heating the substrate is stopped to increase heat transfer from the process chamber to its outside such that a detected temperature of the outer peripheral side of the substrate decreases faster than a detected temperature of the central side of the substrate decreases during the DEPOSITION period, and wherein the operation of the cooling the substrate is stopped to increase the temperature inside the process chamber, and the operation of the heating the substrate is executed at a set rate that gradually decreases from a processing temperature; and the process gas is supplied into the process chamber during the executing the DEPOSITION period, and wherein a difference between the detected temperature of the outer peripheral side of the substrate and the detected temperature of the central side of the substrate is reduced by stopping the operation of the cooling the substrate and executing the operation of the heating, the substrate during the DEPOSITION period.

8 . The method of claim 7 , wherein the process gas is supplied into the process chamber concurrently with a timing of starting the DEPOSITION period.

9 . The method of claim 7 , wherein the process gas is supplied into the process chamber at a timing that is different from a timing of starting the DEPOSITION period.

10 . The method of claim 7 , further comprising:
controlling the operation of the heating the substrate by setting a preset temperature; and performing a control such that the preset temperature is lowered at a predetermined temperature drop rate and the process gas is supplied into the process chamber at a timing of starting the DEPOSITION period.

Assignees

• Kokusai Electric Corp

Inventors

• Sugishita Masashi
• URANO Yuuji
• Maeda Kiyohiko
• Ueno Masaaki
• Kosugi Tetsuya
• Nishida Masaya

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0434

  mainly by convection · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/4411

  Cooling of the reaction chamber walls (C23C16/45572 takes precedence) · CPC title

• G05B2219/45031

  Manufacturing semiconductor wafers · CPC title