Substrate cleaning method

Patent metadata

Field	Value
Publication number	US-2020303220-A1
Application number	US-202016892396-A
Country	US
Kind code	A1
Filing date	Jun 4, 2020
Priority date	May 9, 2017
Publication date	Sep 24, 2020
Grant date	—

Abstract

A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

First claim

We claim:

1 . A substrate cleaning method, comprising:
a residue removing processing of removing a residue adhering to an upper portion of a pattern on a substrate by supplying a first processing liquid configured to remove the residue adhering to the substrate onto the substrate on which the pattern having protrusion and recess is formed on a metal film and the metal film is exposed at the recess of the pattern; a protective film forming processing of forming, before the residue removing processing, the protective film on the metal film by supplying, onto the substrate, a second processing liquid configured to form a protective film insoluble to the first processing liquid by being solidified or cured in a state that the upper portion of the pattern is exposed from the protective film; and a protective film removing processing of removing the protective film from the substrate by supplying, onto the substrate after being subjected to the residue removing processing, a third processing liquid configured to dissolve the protective film.

2 . The substrate cleaning method of claim 1 ,
wherein the second processing liquid contains a compound having a fluorine atom.

3 . The substrate cleaning method of claim 2 ,
wherein the compound is represented by Chemical Formula 1 as follows, and

R denotes an alkyl group.

4 . The substrate cleaning method of claim 1 ,
wherein the third processing liquid is an organic solvent.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Aibara Meitoku

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/10

  using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title