Etch rate and critical dimension uniformity by selection of focus ring material
US-2017011891-A1 · Jan 12, 2017 · US
US2020185256A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020185256-A1 |
| Application number | US-201916657604-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 18, 2019 |
| Priority date | Dec 7, 2018 |
| Publication date | Jun 11, 2020 |
| Grant date | — |
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Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.
Opening claim text (preview).
1 . A substrate support assembly, comprising: an electrostatic chuck comprising a first recess formed in an upper portion of the electrostatic chuck; and a process kit surrounding the electrostatic chuck, wherein the process kit comprises: an inner ring; and an outer ring disposed radially outward of the inner ring, wherein the outer ring comprises a second recess formed in an upper portion of an upper ring, and the inner ring is positioned within and supported by the first recess and the second recess so that an upper surface of the inner ring and an upper surface of the outer ring are co-planar. 2 . The substrate support assembly of claim 1 , wherein the inner ring is fabricated from silicon. 3 . The substrate support assembly of claim 1 , wherein the outer ring is fabricated from quartz. 4 . The substrate support assembly of claim 1 , wherein the upper surface of the inner ring has a plurality of protrusions disposed symmetrically around a circumference of the inner ring. 5 . The substrate support assembly of claim 1 , further comprising: a pumping ring disposed over the outer ring. 6 . The substrate support assembly of claim 5 , wherein the pumping ring has a plurality of protrusions disposed at a bottom surface of the pumping ring. 7 . The substrate support assembly of claim 1 , wherein a top surface of the first recess and a top surface of the second recess are at a same elevation. 8 . An substrate support assembly for processing a substrate, the substrate support assembly comprising: a substrate support; an electrostatic chuck disposed on the substrate support, wherein the electrostatic chuck comprises a first recess formed in an upper portion of the electrostatic chuck; and a process kit surrounding the electrostatic chuck, wherein the process kit comprises: an inner ring; an outer ring disposed radially outward of the inner ring, wherein the outer ring comprises a second recess formed in an upper portion of an upper ring, wherein the inner ring is positioned within and supported by the first recess and the second recess, and an upper surface of the outer ring is higher than an upper surface of the inner ring; and a plurality of pumping channels formed through the outer ring, wherein the pumping channels are angled downwardly towards a direction away from the inner ring. 9 . The substrate support assembly of claim 8 , wherein the inner ring is fabricated from silicon. 10 . The substrate support assembly of claim 8 , wherein the outer ring is fabricated from quartz. 11 . The substrate support assembly of claim 8 , wherein the upper surface of the inner ring has a plurality of protrusions disposed symmetrically around a circumference of the inner ring. 12 . The substrate support assembly of claim 8 , wherein a longitudinal direction of the pumping channels is at an angle with respect to a direction extending along an outer peripheral surface of the outer ring. 13 . The substrate support assembly of claim 12 , wherein the angle is in a range of about 30 degrees to about 88 degrees. 14 . The substrate support assembly of claim 8 , further comprising: a cover ring disposed over the outer ring. 15 . The substrate support assembly of claim 14 , wherein the cover ring is fabricated from quartz or silicon. 16 . A method of removing particles from a substrate support surface, comprising: arrange a top surface of an outer ring coplanar with a top surface of an inner ring, an outer ring disposed radially outward of the inner ring, the outer ring including a first upper surface and a second upper surface, wherein first upper surface is co-planar with the upper surface of the inner ring; symmetrically arrange a plurality of protrusions on an inner ring for positioning a substrate on a substrate surface; provide pumping channels on the outer ring, the pumping channels configured to pump unwanted material away from the substrate support. 17 . The method recited in claim 16 , further comprising: positioning a portion of each pumping channel at an acute angle below a bottom surface of the substrate. 18 . The method recited in claim 16 , further comprising: provide a slanted surface in the outer ring at an acute angle below the top surface of the outer ring. 19 . The method recited in claim 16 , wherein the pumping channels are provided through a surface of the outer ring. 20 . The method recited in claim 16 , further comprising: arranging a cover ring above the outer ring.
characterised by edge profile or support profile · CPC title
Details of electrostatic chucks · CPC title
characterised by edge clamping, e.g. clamping ring · CPC title
characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title
using electrostatic chucks · CPC title
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