Photo detection element, optical sensor, and method of manufacturing photo detection element

Patent metadata

Field	Value
Publication number	US-2020152817-A1
Application number	US-201916601654-A
Country	US
Kind code	A1
Filing date	Oct 15, 2019
Priority date	Nov 8, 2018
Publication date	May 14, 2020
Grant date	—

Abstract

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

First claim

What is claimed is:

1 . A photo detection element comprising:
a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

2 . The photo detection element according to claim 1 , wherein
a material of the spacer layer is hexagonal boron nitride.

3 . The photo detection element according to claim 1 , wherein
a material of the spacer layer is transition metal di-chalcogenide.

4 . The photo detection element according to claim 1 , wherein
the light-receiving layer includes a first side surface and a second side surface, the first side surface being inclined with respect to a normal direction of the substrate, the second side surface being inclined with respect to the normal direction, and the first electrode is formed over the first side surface, and the second electrode is formed over the second side surface.

5 . The photo detection element according to claim 1 , wherein
the light-receiving layer includes a first region and a second region, first holes are formed in the light-receiving layer in the first region, second holes are formed in the light-receiving layer in the second region, the first electrode is formed in the first holes, and the second electrode is formed in the second holes.

6 . The photo detection element according to claim 5 , wherein
each of the first holes has a tapered shape in cross-sectional view, and each of the second holes has a tapered shape in cross-sectional view.

7 . The photo detection element according to claim 1 , wherein
first grooves and second grooves are formed in the light-receiving layer, the first electrode is comb-shaped, the first electrode including first teeth embedded in the first grooves, and the second electrode is comb-shaped, the second electrode including second teeth embedded in the second grooves.

8 . The photo detection element according to claim 1 , wherein
the light-receiving layer is separated into a first light receiving section and a second light receiving section by an element separation groove, the first electrode and the second electrode are provided to each of the first light receiving section and the second light receiving section, and the first electrode of the first light receiving section is electrically connected to the second electrode of the second light receiving section.

9 . The photo detection element according to claim 1 , wherein
a lowermost layer of the light-receiving layer is the spacer layer.

10 . The photo detection element according to claim 1 , wherein
an uppermost layer of the light-receiving layer is the spacer layer.

11 . The photo detection element according to claim 1 , wherein
a plurality of the spacer layers is stacked in a portion of the light-receiving layer, the portion ranging from a lowermost layer of the light-receiving layer to an intermediate depth of the light-receiving layer, the graphene layers not existing between the adjacent spacer layers in the portion.

12 . A method of manufacturing a photo detection element, comprising:
forming a light-receiving layer by alternately stacking graphene layers and spacer layers over a substrate, light passing through each of the spacer layers, the spacer layers being made of insulating material; forming a first electrode that is in contact with the light-receiving layer; and forming a second electrode such that the second electrode is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

13 . The method according to claim 12 , wherein
the forming of the light-receiving layer includes alternately repeating transferring the graphene layer formed over a first supporting layer to the substrate and transferring the spacer layer formed over a second supporting layer to the substrate.

14 . The method according to claim 13 , further comprising:
forming the graphene layer over a catalytic metal layer; forming the first supporting layer over the graphene layer; removing the catalytic metal layer by dissolving the catalytic metal layer after the forming of the first supporting layer; and removing the first supporting layer by dissolving the first supporting layer after the transferring of the graphene layers to the substrate.

15 . The method according to claim 13 , further comprising:
forming the spacer layer over a catalytic metal layer; forming the second supporting layer over the spacer layer; removing the catalytic metal layer by dissolving the catalytic metal layer after the forming of the second supporting layer; and removing the second supporting layer by dissolving the second supporting layer after the transferring of the spacer layer to the substrate.

16 . The method according to claim 13 , wherein
the transferring of the spacer layer formed over the second supporting layer to the substrate includes heating the substrate.

17 . An optical sensor comprising:
pixels formed at intervals in a plane, each of the pixels outputting an output voltage corresponding to an intensity of an incident light; and an amplifier circuit configured to amplify the output voltage, wherein the pixel includes:
a substrate;
a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material;
a first electrode that is in contact with the light-receiving layer; and
a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

18 . The photo detection element according to claim 1 , wherein
the light is an infrared light.

19 . The method according to claim 12 , wherein
the light is an infrared light.

20 . The optical sensor according to claim 17 , wherein
the light is an infrared light.

Assignees

• Fujitsu Ltd

Inventors

• Sato Shintaro
• Nishino Hironori
• Kondo Daiyu
• Hayashi Kenjiro

Classifications

• H01L31/0324

  Electricity · mapped topic

• H01L31/09 Primary

  Electricity · mapped topic

• H01L31/022408

  Electricity · mapped topic

• H01L31/03044

  Electricity · mapped topic

• H10F77/1246

  III-V nitrides, e.g. GaN · CPC title