Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9209331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9209331-B2 |
| Application number | US-201414336783-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2014 |
| Priority date | Apr 18, 2008 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
Opening claim text (preview).
What is claimed is: 1. An optically sensitive device comprising: a first contact; an n-type semiconductor; an optically sensitive material comprising a p-type semiconductor; a second contact; a magnitude of the work function of the optically sensitive material being at least 0.4 eV greater than a magnitude of the work function of the first contact, and also at least 0.4 eV greater than a magnitude of the work function of the second contact; the optically sensitive material h…
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