Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching gaas
US-2016372624-A1 · Dec 22, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L31/03044 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 300 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 30 |
| 2016 | 37 |
| 2017 | 49 |
| 2018 | 41 |
| 2019 | 39 |
| 2020 | 38 |
| 2021 | 22 |
| 2022 | 21 |
| 2023 | 8 |
| 2024 | 12 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Josephson junction readout for graphene-based single photon detector
US-2016372622-A1 · Dec 22, 2016 · US
Exfoliation
US-2016340533-A1 · Nov 24, 2016 · US
Method of forming an integrated circuit and related integrated circuit
US-2016327737-A1 · Nov 10, 2016 · US
Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
US-9484490-B2 · Nov 1, 2016 · US
Method of manufacturing structures of LEDs or solar cells
US-9478707-B2 · Oct 25, 2016 · US
Semiconductor photo-detecting device
US-9478690-B2 · Oct 25, 2016 · US
Method for the reuse of gallium nitride epitaxial substrates
US-2016307801-A1 · Oct 20, 2016 · US
Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
US-2016300825-A1 · Oct 13, 2016 · US
Variable range photodetector with enhanced high photon energy response and method thereof
US-2016300973-A1 · Oct 13, 2016 · US
Enhanced deep ultraviolet photodetector and method thereof
US-2016284919-A1 · Sep 29, 2016 · US
Semiconductor photo-detecting device
US-2016276516-A1 · Sep 22, 2016 · US
Light Emitting Diodes and Photodetectors
US-2016233370-A1 · Aug 11, 2016 · US
Planar nonpolar group-iii nitride films grown on miscut substrates
US-2016230312-A1 · Aug 11, 2016 · US
High-voltage solid-state transducers and associated systems and methods
US-2016211430-A1 · Jul 21, 2016 · US
Optoelectronic semiconductor component and method for producing a mirror region on a semiconductor body
US-9397268-B2 · Jul 19, 2016 · US
Optoelectronic device comprising microwires or nanowires
US-2016204312-A1 · Jul 14, 2016 · US
Method to make buried, highly conductive p-type iii-nitride layers
US-2016197151-A1 · Jul 7, 2016 · US
Generation of Flexible High Power Pulsed Waveforms
US-2016197215-A1 · Jul 7, 2016 · US
Flexible semiconductor devices and methods of manufacturing the same
US-9385251-B2 · Jul 5, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L31/03044?
- CPC H01L31/03044 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L31/03044 (Electricity)?
- Our database includes 300 publications tagged with this CPC code.
- Is patent activity under CPC H01L31/03044 growing?
- Publication counts under this code: 12 in 2024 vs 3 in 2025 (latest complete years).