Apparatus for surpoting substrate and manufacturing mathod threrof

US2020118860A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020118860-A1
Application numberUS-201916599155-A
CountryUS
Kind codeA1
Filing dateOct 11, 2019
Priority dateOct 15, 2018
Publication dateApr 16, 2020
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An apparatus for supporting a substrate is proposed. The apparatus includes: a base plate including at least one first gas supply hole formed therein so as to allow supply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one first gas supply hole, wherein the at least one second gas supply hole is formed before sintering of the electrostatic chuck.

First claim

Opening claim text (preview).

What is claimed is: 1 . An apparatus for supporting a substrate, the apparatus comprising: a base plate including at least one first gas supply hole formed therein so as to allow supply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one first gas supply hole, wherein the at least one second gas supply hole is formed before sintering of the electrostatic chuck. 2 . The apparatus of claim 1 , wherein the at least one second gas supply hole is smaller in diameter than the at least one first gas supply hole. 3 . The apparatus of claim 1 , wherein the second gas supply holes have different diameters. 4 . The apparatus of claim 1 , wherein the second gas supply holes are grouped into a plurality of groups of second gas supply holes, such that one group of the plurality of groups of second gas supply holes is disposed within a diameter range of one of the at least one first gas supply hole. 5 . The apparatus of claim 4 , wherein the second gas supply holes are arranged at irregular intervals. 6 . The apparatus of claim 1 , wherein the base plate and the electrostatic chuck are bonded together by an adhesive layer. 7 . The apparatus of claim 1 , further comprising: a porous body provided inside the at least one first gas supply hole. 8 . A method of manufacturing an apparatus for supporting a substrate, the method comprising: forming a first gas supply hole in a base plate; forming a second gas supply hole in an electrostatic chuck; sintering the electrostatic chuck so as to reduce a diameter of the second gas supply hole; and fixing the sintered electrostatic chuck onto the base plate such that the first and second gas supply holes communicate with each other. 9 . The method of claim 8 , wherein in the forming of the second gas supply hole in the electrostatic chuck, a plurality of second gas supply holes is formed to be disposed within a diameter range of the first gas supply hole. 10 . The method of claim 8 , further comprising: supplying a fluid into the second gas supply hole at a predetermined pressure after the sintering of the electrostatic chuck.

Assignees

Inventors

Classifications

  • H10P72/722Primary

    Details of electrostatic chucks · CPC title

  • Electricity · mapped topic

  • characterised by a coating, a hardness or a material · CPC title

  • H10P72/72Primary

    using electrostatic chucks · CPC title

  • mainly by convection · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2020118860A1 cover?
An apparatus for supporting a substrate is proposed. The apparatus includes: a base plate including at least one first gas supply hole formed therein so as to allow supply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one…
Who is the assignee on this patent?
Semes Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P72/722. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Apr 16 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).