Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same

Patent metadata

Field	Value
Publication number	US-2020071613-A1
Application number	US-201916502164-A
Country	US
Kind code	A1
Filing date	Jul 3, 2019
Priority date	Aug 30, 2018
Publication date	Mar 5, 2020
Grant date	—

Abstract

Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

First claim

1 .- 9 . (canceled)

10 . A method of preparing a slurry composition for chemical mechanical polishing (CMP), the method comprising:
obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene; removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture; separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration; and adding a polishing additive to the mixture.

11 . The method according to claim 10 , wherein the obtaining of the mixture of the fullerenol complex compound and the unreacted hydrogen peroxide is performed by a two-phase reaction.

12 . The method according to claim 11 , wherein the two-phase reaction comprises bringing a first phase into contact with a second phase, the first phase comprising the fullerene dispersed in an organic solvent, and the second phase comprising hydrogen peroxide.

13 . The method according to claim 12 , wherein the alkylammonium hydroxide acts as a phase transfer catalyst.

14 . The method according to claim 12 , wherein the fullerene in the first phase is converted into fullerenol by the alkylammonium hydroxide and then transferred to the second phase.

15 . The method according to claim 12 , further comprising:
separating the second phase from the first phase, before the removing of the unreacted hydrogen peroxide.

16 . The method according to claim 12 , wherein the hydrogen peroxide decomposition catalyst particles comprise at least one selected from the group consisting of manganese dioxide (MnO 2 ), platinum (Pt), palladium (Pd), nickel (Ni), ruthenium (Ru), rhodium (Rh), silver (Ag), iridium (Ir), gold (Au), rhenium (Re), titanium (Ti), and tantalum (Ta).

17 . The method according to claim 10 , wherein the obtaining of the mixture of the fullerenol complex compound and the unreacted hydrogen peroxide is performed at a temperature of about 50° C. to about 100° C. for about 5 hours to about 25 hours.

18 . The method according to claim 10 , wherein the polishing additive comprises at least one of a pH control agent, a polishing accelerator, an oxidizer, a dispersion stabilizer, a surfactant, a polishing inhibitor, a leveling agent, a corrosion inhibitor, and an amine compound.

19 . The method according to claim 10 , wherein the alkylammonium hydroxide has a structure represented by Chemical Formula 2:
R x H 4-x N(OH)   [Chemical Formula 2]
(where R is a C1 to C8 alkyl group, and x is an integer ranging from 1 to 4).

20 . (canceled)

21 . A method of preparing a slurry composition for chemical mechanical polishing (CMP), the method comprising:
mixing and stirring a first phase and a second phase in the presence of alkylammonium hydroxide, the first phase comprising fullerene dispersed in an organic solvent, and the second phase comprising hydrogen peroxide; performing phase separation between the first phase and the second phase and then removing the first phase; removing unreacted hydrogen peroxide by adding, into the second phase, hydrogen peroxide decomposition catalyst particles having diameters of about 0.01 mm to about 5 mm; separating the hydrogen peroxide decomposition catalyst particles by filtering the second phase; and adding a polishing additive to a residual mixture remaining after the separation of the hydrogen peroxide decomposition catalyst particles.

22 . The method according to claim 21 , wherein, in the removing of the unreacted hydrogen peroxide, the unreacted hydrogen peroxide is decomposed into water and oxygen by the hydrogen peroxide decomposition catalyst particles.

23 . The method according to claim 21 , wherein the second phase comprises an aqueous dispersant.

24 . The method according to claim 21 , wherein fullerenol and a fullerenol complex compound represented by Chemical Formula 3 coexist in the residual mixture:
C q (OH) p R x H 4-x N(OH)   [Chemical Formula 3]
(where p is an arbitrary integer ranging from 10 to q; q is 20, 24, 26, 28, 32, 36, 50, 60, 70, 72, 74, 76, 78, 80, 82, 84, 100, or 200; R is a C1 to C8 alkyl group; and x is an integer ranging from 1 to 4).

25 . A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor pattern defining a trench; forming a metal material film on the semiconductor pattern to fill the trench; and performing chemical mechanical polishing (CMP) of the metal material film by using the slurry composition for CMP such that the metal material film is defined within the trench, the slurry composition comprising polishing particles, the polishing particles comprising a complex compound of fullerenol and alkylammonium hydroxide.

26 . The method according to claim 25 , wherein the fullerenol has a structure represented by Chemical Formula 1:
C q (OH) p   [Chemical Formula 1]
(where p is an arbitrary integer ranging from 10 to q, and q is 20, 24, 26, 28, 32, 36, 50, 60, 70, 72, 74, 76, 78, 80, 82, 84, 100, or 200; R is a C1 to C8 alkyl group; and x is an integer ranging from 1 to 4).

27 . The slurry composition according to claim 26 , wherein the alkylammonium hydroxide has a structure represented by Chemical Formula 2:
R x H 4-x N(OH)   [Chemical Formula 2]
(where R is a C1 to C8 alkyl group, and x is an integer ranging from 1 to 4).

28 . The slurry composition according to claim 27 , wherein R of the alkylammonium hydroxide is an n-butyl group.

29 . The slurry composition according to claim 28 , wherein x is 3 or 4.

30 . The slurry composition according to claim 25 , wherein the polishing particles are dispersion-treated such that surfaces of the polishing particles are negatively charged.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Bo-Yun
• Takai Kenji
• Kim Do-Yoon
• Kim Sang-Kyun
• Yoon Bo-Un

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10D64/01326

  Aspects related to lithography, isolation or planarisation of the conductor · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09G1/06

  Other polishing compositions · CPC title