Substrate Processing Method, Substrate Processing Apparatus, and Substrate Processing System

Patent metadata

Field	Value
Publication number	US-2019348293-A1
Application number	US-201916409220-A
Country	US
Kind code	A1
Filing date	May 10, 2019
Priority date	May 14, 2018
Publication date	Nov 14, 2019
Grant date	—

Abstract

There is provided a method of processing a substrate, the method including: a production process of producing B(OH 3 ) or B 2 O 3 by bringing an oxidizing agent into contact with a boron-based film in a substrate in which the boron-based film is formed on a film including a silicon-based film; and a removal process of removing the boron-based film from the substrate by dissolving the B(OH 3 ) or B 2 O 3 produced in the production process in water.

First claim

What is claimed is:

1 . A method of processing a substrate, comprising:
a production process of producing B(OH 3 ) or B 2 O 3 by bringing an oxidizing agent into contact with a boron-based film in a substrate in which the boron-based film is formed on a film including a silicon-based film; and a removal process of removing the boron-based film from the substrate by dissolving the B(OH 3 ) or B 2 O 3 produced in the production process in water.

2 . The method of claim 1 , wherein the production process includes producing the B(OH 3 ) or B 2 O 3 by bringing an ozone-containing aqueous solution into contact with the boron-based film, and
the removal process includes dissolving the B(OH 3 ) or B 2 O 3 produced in the production process in the water contained in the ozone-containing aqueous solution.

3 . The method of claim 2 , further comprising: a holding process of holding the substrate in a horizontal posture; and
a heating process of heating the ozone-containing aqueous solution, wherein the production process includes bringing the ozone-containing aqueous solution into contact with the boron-based film by supplying the ozone-containing aqueous solution to the substrate held in the holding process using a supply part, the supply part being provided with a nozzle configured to discharge the ozone-containing aqueous solution and a nozzle arm configured to support the nozzle, the nozzle arm having a supply passage of the ozone-containing aqueous solution formed therein, wherein the heating process includes heating the ozone-containing aqueous solution flowing through the supply passage using a heating part provided in the nozzle arm.

4 . The method of claim 1 , further comprising: a heating process of heating an ozone-containing aqueous solution.

5 . The method of claim 1 , wherein the production process includes producing the B(OH 3 ) or B 2 O 3 by bringing a hydrogen peroxide solution into contact with the boron-based film, and the removal process includes dissolving the B(OH 3 ) or B 2 O 3 produced in the production process in the water contained in the hydrogen peroxide solution.

6 . The method of claim 5 , wherein a concentration of a hydrogen peroxide in the hydrogen peroxide solution falls within a range of from 16.5 wt % to 35 wt %.

7 . The method of claim 1 , wherein the production process includes producing the B(OH 3 ) or B 2 O 3 by bringing a mixed solution of a nitric acid, a strong acid stronger than the nitric acid, and the water into contact with the boron-based film, and
the removal process includes dissolving the B(OH 3 ) or B 2 O 3 produced in the production process in the water contained in the mixed solution.

8 . The method of claim 7 , wherein the strong acid is a sulfuric acid having a concentration of 64 wt % or less, and a concentration of the nitric acid fall within a range of from 3 wt % to 69 wt %.

9 . A substrate processing apparatus, comprising:
a holding part configured to hold a substrate in which a boron-based film is formed on a film including a silicon-based film; and a removal processing part configured to produce a B(OH 3 ) or B 2 O 3 by bringing an oxidizing agent into contact with the boron-based film in the substrate held by the holding part, and to remove the boron-based film from the substrate by dissolving the produced B(OH 3 ) or B 2 O 3 in water.

10 . A substrate processing system, comprising:
a film forming apparatus configured to form a boron-based film on a substrate having a film including a silicon-based film; an etching apparatus configured to etch the substrate on which the boron-based film is formed by the film forming apparatus; and a substrate processing apparatus configured to remove the boron-based film from the substrate etched by the etching apparatus, wherein the substrate processing apparatus includes:
a holding part configured to hold the substrate in which the boron-based film is formed on the film including the silicon-based film; and
a removal processing part configured to produce a B(OH 3 ) or B 2 O 3 by bringing an oxidizing agent into contact with the boron-based film in the substrate held by the holding part, and to remove the boron-based film from the substrate by dissolving the produced B(OH 3 ) or B 2 O 3 in water.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title