Thin-film photovoltaic device and associated method of fabrication

Patent metadata

Field	Value
Publication number	US-2019296169-A1
Application number	US-201716302389-A
Country	US
Kind code	A1
Filing date	May 12, 2017
Priority date	May 20, 2016
Publication date	Sep 26, 2019
Grant date	—

Abstract

A thin-film photovoltaic device is proposed having an optimized layout for one of the electrical contacts. The device comprises a substrate. A first thin film forming a first electrical contact of the photovoltaic device is arranged on the substrate. An absorber is arranged on the first electrical contact. A second thin film forming a second electrical contact of the photovoltaic device is arranged on the substrate. A transparent conductive layer is arranged on the absorber. In addition, the second electrical contact is spaced apart from the first electrical contact, and the transparent conductive layer is in contact with the absorber and the second electrical contact.

First claim

1 : A thin-film photovoltaic device in the form of a semi-transparent photovoltaic panel, comprising:
a substrate, at least a first electrically conductive thin layer forming a first electrical contact of the photovoltaic device on the substrate, an absorber arranged on the first electrical contact, at least a second electrically conductive thin layer forming a second electrical contact of the photovoltaic device on the substrate, a transparent conductive layer arranged on the absorber,
the second electrical contact being spaced apart from the first electrical contact, and the transparent conductive layer being in contact with the absorber and the second electrical contact.

2 : The device according to claim 1 , wherein the second electrical contact and the first electrical contact are structured in an interleaved manner.

3 : The device according to claim 1 , wherein the second electrical contact comprises each of the layers of the first electrical contact.

4 : The device according to claim 1 , wherein the absorber covers side faces and an upper face of the first electrical contact.

5 : The device according to claim 1 , wherein the second electrical contact further comprises a material selected among: 316L stainless steel, an alloy of Fe—Cr—Ni—Mo, Ni—Mo—P, MoO 2 , ZnO, SnO 2 , aluminum-doped ZnO, fluorine-doped tin oxide FTO, steels containing carbon and manganese, compounds based on cobalt and phosphorus.

6 : The device according to claim 1 , wherein the photovoltaic device is a light-concentrating device.

7 : A method for fabricating a thin film photovoltaic device in the form of a semi-transparent photovoltaic panel, comprising:
forming at least a first electrically conductive thin layer forming a first electrical contact of the photovoltaic device on a substrate, forming at least a second electrically conductive thin layer forming a second electrical contact of the photovoltaic device on the substrate, depositing an absorber on the first electrical contact, depositing a transparent conductive layer on the absorber,
the second electrical contact being spaced apart from the first electrical contact, and the transparent conductive layer being in contact with the absorber and the second electrical contact.

8 : The method according to claim 7 , further comprising:
forming the second electrically conductive thin layer by etching the first electrical contact.

9 : The method according to claim 7 , further comprising:
forming the first and second electrical contacts such that the second electrical contact and the first electrical contact are structured in an interleaved manner.

10 : The method according to claim 7 , further comprising:
forming the first and second electrical contacts such that the second electrical contact is spaced apart from the first electrical contact by a distance substantially equal to or greater than a thickness of the absorber.

11 : The method according to claim 7 , wherein:
depositing the absorber on the first electrical contact further comprises:
depositing a precursor material of the absorber on the first electrical contact by a technique selected among: electrodeposition, evaporation, ink printing,
incorporating a material selected among selenium and sulfur into the precursor material.

12 : The method according to claim 7 , further comprising:
forming a corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, on the second electrical contact.

13 : The method according to claim 12 , further comprising:
forming the corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, by a technique selected among: electrodeposition, thermal oxidation in an oxidizing atmosphere of a conductive layer of the second electrical contact, electrochemical oxidation of a conductive layer of the second electrical contact.

14 : The method according to claim 12 , further comprising:
treating the corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, by adding phosphorus.

15 : The method according to claim 7 , further comprising:
depositing an electrically conductive layer on the second electrical contact, subsequent to an annealing step.

Assignees

• Electricite De France
• Paris Sciences Lettres Quartier Latin
• Centre Nat Rech Scient

Inventors

• Paire Myriam
• Duchatelet Aurelien
• Grand Pierre-Philippe
• Jutteau Sebastien

Classifications

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L31/0547

  Electricity · mapped topic

• H01L31/0463

  Electricity · mapped topic

• H01L31/0465 Primary

  Electricity · mapped topic

• H10F77/488

  Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection · CPC title