Method for manufacturing a photovoltaic module with two etching steps P2 and P3 and corresponding photovoltaic module

US9502597B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9502597-B2
Application numberUS-201314371269-A
CountryUS
Kind codeB2
Filing dateJan 9, 2013
Priority dateJan 11, 2012
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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  5. First independent claim

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Abstract

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The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface ( 41 ), a photovoltaic layer ( 46 ) obtained by depositing a layer ( 42 ) of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer ( 43 ) in order to create a pn junction with the photovoltaic layer ( 46 ); characterized in that the layer ( 42 ) is deposited in a localized manner, such as to leave free at least one area ( 410 ) of the electrode on the rear surface ( 41 ) placed between two adjacent cells, wherein the annealing step modifies said area ( 410 ) which has higher resistivity than the rest of the electrode on the rear surface ( 41 ), such as to provide electric insulation between two adjacent cells.

First claim

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The invention claimed is: 1. A process for producing a photovoltaic module comprising a plurality of solar cells in a thin-film structure, wherein the process comprises: producing successively: a back-face electrode, a photovoltaic layer obtained by annealing a precursor layer, wherein the precursor layer comprises metallic precursors, and a second semiconductor layer in order to create a p-n junction with the photovoltaic layer, characterized in that the precursor layer is depo…

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What does patent US9502597B2 cover?
The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface ( 41 ), a photovoltaic layer ( 46 ) obtained by depositing a layer ( 42 ) of precursors and by annealing such as to convert the precursors into a semiconductor material, and an…
Who is the assignee on this patent?
Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification H01L31/0512. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).