Method for manufacturing semiconductor wafer
US-2017011903-A1 · Jan 12, 2017 · US
US2019295836A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019295836-A1 |
| Application number | US-201816113960-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 27, 2018 |
| Priority date | Mar 20, 2018 |
| Publication date | Sep 26, 2019 |
| Grant date | — |
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An electrolytic plating apparatus includes a plating tank that is filled with plating liquid; a moving mechanism configured to vertically move a processing target substrate in a direction normal to a surface of the plating liquid; a seal member that is disposed at a peripheral edge portion of a processing target surface of a processing target substrate and is configured to seal the plating liquid to a center side of the processing target surface when the processing target substrate is immersed in the plating tank; and a contact member that is separated from the seal member and is electrically connected to the processing target surface.
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What is claimed is: 1 . An electrolytic plating apparatus comprising: a plating tank that is filled with plating liquid; a moving mechanism configured to vertically move a processing target substrate in direction normal to a surface of the plating liquid; a seal member that is disposed at a peripheral edge portion of a processing target surface of the processing target substrate and is configured to seal the plating liquid to a center side of the processing target surface when the processing target substrate is immersed in the plating tank; and a contact member that is separated from the seal member and is electrically connected to the processing target surface. 2 . The electrolytic plating apparatus according to claim 1 , wherein the contact member comes into contact with the processing target substrate closer to a periphery of the processing target substrate than the seal member, or comes into contact with a supporting substrate which supports the processing target substrate, and wherein a height of the processing target surface in a normal direction at a portion where the contact member is in contact with the processing target substrate or the supporting substrate and a height of the processing target surface in a normal direction at a portion where the seal member is in contact with the processing target substrate are configured to be controlled separately from each other. 3 . The electrolytic plating apparatus according to claim 2 , further comprising a processing target substrate supporting portion that supports the processing target substrate, and wherein the moving mechanism is configured to control a height of the processing target substrate supporting portion. 4 . The electrolytic plating apparatus according to claim 1 , wherein the contact member comes into contact with at least one of a first end surface of the processing target substrate on a side that is connected to the processing target surface, a second end surface of the processing target substrate opposite to the processing target surface, a third end surface of a supporting substrate on a side of the supporting substrate that supports the processing target substrate, and a fourth end surface of the supporting substrate opposite to a contact surface of the processing target substrate on the supporting substrate. 5 . The electrolytic plating apparatus according to claim 4 , wherein the moving mechanism applies at least one of (i) a pressing force that is applied to the processing target substrate by the seal member and (ii) a pressing force that is applied to the processing target substrate or the supporting substrate by the contact member, wherein the pressing forces are controlled separately from each other. 6 . The electrolytic plating apparatus according to claim 5 , wherein the contact member is connected to at least one of the first to fourth end surfaces at a plurality of portions separated from each other, and wherein the pressing force that is applied to the processing target substrate by the contact member is controlled separately in each of the plurality of portions. 7 . The electrolytic plating apparatus according to claim 6 , wherein a height of the processing target surface in the normal direction at the portion where the contact member is in contact with the processing target substrate or the supporting substrate and a height of the processing target surface in the normal direction at a portion where the seal member is in contact with the processing target substrate are separately controlled at each of the plurality of portions. 8 . The electrolytic plating apparatus according to claim 1 , wherein the sealing member has an annular shape. 9 . The electrolytic plating apparatus according to claim 8 , wherein the contact member is provided at a plurality of portions at predetermined intervals along an outer peripheral edge of a supporting substrate which supports the processing target substrate. 10 . The electrolytic plating apparatus according to claim 9 , comprising a plurality of contact members including the contact member, wherein the plurality of contact members are separated from each other. 11 . The electrolytic plating apparatus according to claim 10 , wherein the seal member and the plurality of contact members are separated from each other. 12 . The electrolytic plating apparatus according to claim 8 , wherein the sealing member comprises an elastic insulating material. 13 . A method for electrolytic plating using an apparatus that includes a moving mechanism, a seal member, a contact member, and a plating tank, comprising: providing a processing target substrate such that the processing target substrate is in contact with the seal member, and at least one of the contact member and a support substrate; and immersing the processing target substrate in the plating tank using the moving mechanism such that the moving mechanism applies at least one of (i) a pressing force that is applied to the processing target substrate by the seal member, and (ii) a pressing force that is applied to the processing target substrate or the supporting substrate by the contact member. 14 . The method of claim 13 , wherein the pressing forces are controlled separately from each other. 15 . The method of claim 13 , further comprising adhering the processing target substrate to the support substrate. 16 . The method of claim 15 , further comprising polishing the processing target substrate such that the target substrate adheres to the support substrate. 17 . The method of claim 13 , wherein the apparatus further comprises an anode electrode, the method further comprising electrically setting a voltage of the contact member to serve as a ground relative to the anode electrode. 18 . The method of claim 13 , wherein the sealing member has an annular shape. 19 . The method of claim 18 , wherein the contact member is provided at a plurality of portions at predetermined intervals along an outer peripheral edge of a supporting substrate which supports the processing target substrate. 20 . The method of claim 19 , wherein the apparatus comprises a plurality of contact members including the contact member, and the plurality of contact members are separated from each other.
by edge treatment, e.g. chamfering · CPC title
Process monitoring, e.g. flow or thickness monitoring · CPC title
comprising at least one plating chamber · CPC title
using a liquid · CPC title
Contacting devices · CPC title
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