Method of electroplating metal into recessed feature and electroplating layer in recessed feature

Patent metadata

Field	Value
Publication number	US-2019109389-A1
Application number	US-201816205286-A
Country	US
Kind code	A1
Filing date	Nov 30, 2018
Priority date	Jan 15, 2016
Publication date	Apr 11, 2019
Grant date	—

Abstract

A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

First claim

What is claimed is:

1 . A method of electroplating a metal into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive, and a leveler additive, wherein:
the recessed feature has a first elongated region, a second elongated region, and a cross region laterally between the first elongated region and the second elongated region, and
a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and
electroplating the metal into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature.

2 . The method of claim 1 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive.

3 . The method of claim 1 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the leveler additive.

4 . The method of claim 1 , wherein a molar concentration of the suppressor additive is in a range of 1.5 mol/L to 3 mol/L.

5 . The method of claim 1 , wherein the cross region has a width less than or equal to 50 nm.

6 . The method of claim 1 , wherein the cross region has a depth greater than or equal to 50 nm.

7 . The method of claim 1 , wherein the cross region has a depth greater than or equal to 50 nm.

8 . The method of claim 1 , wherein the cross region has a depth greater than a depth of the first elongated region.

9 . The method of claim 1 , wherein contacting the surface of the recessed feature with the electroplating solution comprises contacting the surface with the electroplating solution prior to electroplating the metal.

10 . The method of claim 1 , comprising:
applying a seed layer to the surface prior to contacting the surface with the electroplating solution.

11 . The method of claim 1 , wherein the accelerator additive is absorbed by the surface.

12 . The method of claim 1 , wherein electroplating the metal comprises forming the electroplating layer in the recessed feature such that an atomic ratio of carbon to the metal in the recessed feature is less than or equal to 0.1.

13 . The method of claim 1 , wherein the metal ions comprise copper and at least one of tin, zinc, indium, or antimony.

14 . A method of electroplating a metal into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive, and a leveler additive, wherein:
the recessed feature has a first elongated region, a second elongated region, and a cross region laterally between the first elongated region and the second elongated region, and
a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive; and
electroplating the metal into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature.

15 . The method of claim 14 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the leveler additive.

16 . The method of claim 15 , wherein a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2).

17 . The method of claim 14 , wherein the cross region has a depth greater than a depth of the first elongated region.

18 . The method of claim 14 , wherein electroplating the metal comprises forming the electroplating layer in the recessed feature such that an atomic ratio of carbon to the metal in the recessed feature is less than or equal to 0.1.

19 . A method of electroplating a metal into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, and a suppressor additive, wherein:
the recessed feature has a first elongated region, a second elongated region, and a cross region laterally between the first elongated region and the second elongated region, and
a molar concentration ratio of the accelerator additive: the suppressor additive is (8-15):(1.5-3); and
electroplating the metal into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature.

20 . The method of claim 19 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Nian Jun-Nan
• Wu Jyun-Ru
• Jangjian Shiu-Ko
• Peng Yu-Ren
• Hung Chi-Cheng
• Wang Yu-Sheng

Classifications

• H02G3/081

  Bases, casings or covers · CPC title

• C25D3/38

  of copper · CPC title

• H01R4/2433 Primary

  one part of the base being movable to push the cable into the slot · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D7/12 Primary

  Semiconductors · CPC title