Substrate cleaning apparatus and substrate cleaning method

Patent metadata

Field	Value
Publication number	US-2018330971-A1
Application number	US-201815972492-A
Country	US
Kind code	A1
Filing date	May 7, 2018
Priority date	May 9, 2017
Publication date	Nov 15, 2018
Grant date	—

Abstract

A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

First claim

We claim:

1 . A substrate cleaning apparatus, comprising:
a first processing unit configured to supply a first processing liquid configured to remove a residue adhering to a substrate onto the substrate on which a pattern having protrusion and recess is formed on a metal film and the metal film is exposed at the recess of the pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid configured to form a protective film insoluble to the first processing liquid by being solidified or cured; a third processing unit configured to supply, onto the substrate, a third processing liquid configured to dissolve the protective film; and a control unit configured to control the first processing unit, the second processing unit and the third processing unit, wherein the control unit controls the first processing unit, the second processing unit and the third processing unit to perform a protective film forming processing of forming, by supplying the second processing liquid onto the substrate, the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; a residue removing processing of removing the residue adhering to the upper portion of the pattern by supplying the first processing liquid onto the substrate after being subjected to the protective film forming processing; and a protective film removing processing of removing the protective film from the substrate by supplying the third processing liquid onto the substrate after being subjected to the residue removing processing.

2 . The substrate cleaning apparatus of claim 1 ,
wherein the second processing liquid contains a compound having a fluorine atom.

3 . The substrate cleaning apparatus of claim 2 ,
wherein the compound is represented by Chemical Formula 1 as follows, and

R denotes an alkyl group.

4 . The substrate cleaning apparatus of claim 1 ,
wherein the third processing liquid is an organic solvent.

5 . The substrate cleaning apparatus of claim 1 , further comprising:
a chamber in which the first processing unit, the second processing unit and the third processing unit are provided.

6 . The substrate cleaning apparatus of claim 1 , further comprising:
a first chamber in which the second processing unit is provided; and a second chamber in which the first processing unit and the third processing unit are provided.

7 . A substrate cleaning method, comprising:
a residue removing processing of removing a residue adhering to an upper portion of a pattern on a substrate by supplying a first processing liquid configured to remove the residue adhering to the substrate onto the substrate on which the pattern having protrusion and recess is formed on a metal film and the metal film is exposed at the recess of the pattern; a protective film forming processing of forming, before the residue removing processing, the protective film on the metal film by supplying, onto the substrate, a second processing liquid configured to form a protective film insoluble to the first processing liquid by being solidified or cured in a state that the upper portion of the pattern is exposed from the protective film; and a protective film removing processing of removing the protective film from the substrate by supplying, onto the substrate after being subjected to the residue removing processing, a third processing liquid configured to dissolve the protective film.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Aibara Meitoku

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/10

  using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title