Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9390943-B2
Application number	US-201313767195-A
Country	US
Kind code	B2
Filing date	Feb 14, 2013
Priority date	Feb 14, 2012
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

First claim

What is claimed is:

1. A substrate processing apparatus configured to generate an electric field in a processing space between a lower electrode, to which a high frequency power is supplied, and an upper electrode facing the lower electrode and perform plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field, the apparatus comprising:
a plurality of electromagnets disposed on a surface of the upper electrode, each of the electromagnets having a rod-shaped yoke comprising an iron core and a coil wound on a side surface of the yoke, and
a controller configured to control a level and a direction of a current flowing through the coil of each of the electromagnets,
wherein the electromagnets consist of:
(i) a central portion group including at least one electromagnet arranged at a center portion of the upper electrode, said at least one electromagnet of the central portion group each including a processing space side magnetic pole facing toward the processing space,
(ii) a peripheral region group including multiple electromagnets arranged in an annular shape with respect to the center portion of the upper electrode and disposed at an outer side of the central portion group, the electromagnets of the peripheral region group each including a processing space side magnetic pole facing toward the processing space, and
(iii) an outer side group including plural electromagnets arranged in an annular shape with respect to the center portion of the upper electrode and disposed at an outer side of the peripheral region group, the electromagnets of the outer side group each including a processing space side magnetic pole facing toward the processing space,

wherein the peripheral region group is disposed radially inside of an outer periphery of the substrate mounted on the lower electrode and the outer side group is disposed radially outside of the outer periphery of the substrate mounted on the lower electrode,
wherein the yokes of the plurality of electromagnets have a same length and a same permeability,
wherein each yoke of the electromagnets of the outer side group has a lager winding number and a larger diameter than each yoke of said at least one electromagnet of the central portion group and the electromagnets of the peripheral region group, and
wherein a polarity of the processing side space magnetic pole of the central portion group is the same as a polarity of the processing space side magnetic poles of the peripheral region group, and the polarity of the processing space side magnetic poles of the peripheral region group is different from a polarity of the processing space side magnetic poles of the outer side group.

2. The substrate processing apparatus of claim 1 , wherein a frequency of the high frequency power supplied to the lower electrode is about 60 MHz or above.

3. The substrate processing apparatus of claim 1 , wherein each of said at least one electromagnet of the central portion group includes an opposite pole facing away from the processing space,
wherein the electromagnets of the peripheral region group each include an opposite pole facing away from the processing space,
wherein the controller is configured to control a direction of a current flowing through a coil of each electromagnet included in the peripheral region group such that the processing space side magnetic poles of the electromagnets included in the peripheral region group have a same polarity,
wherein the electromagnets of the outer side group each include an opposite pole facing away from the processing space, and
wherein the controller is configured to control a direction of a current flowing through a coil of each electromagnet included in the outer side group such that the processing space side magnetic poles of the electromagnets included in the outer side group have a same polarity
wherein the controller is configured to control the polarity of the processing space side magnetic pole of the central portion group to be the same as the polarity of the processing space side magnetic poles of the peripheral region group, and
wherein the controller is configured to control the polarity of the processing space side magnetic poles of the peripheral region group to be different from the polarity of the processing space side magnetic poles of the outer side group.

4. The substrate processing apparatus of claim 1 , wherein the controller is configured to control a distribution of a plasma density in the processing space by repeating a first and a second period for the high frequency power supplied to the lower electrode,
wherein the high frequency power supplied during the first period is configured so that the electric field is plasma generating; and
wherein the high frequency power supplied during the second period is configured so that the electric field is not plasma generating.

5. The substrate processing apparatus of claim 4 , wherein a ratio of the first period to a sum of the first and the second period ranges from about 10% to about 90%, and
a frequency represented by a multiplicative inverse of the sum of the first and the second period ranges from about 1 Hz to about 1 MHz.

6. The substrate processing apparatus of claim 1 , wherein the controller is configured to simultaneously change the direction of the current flowing through the coil of each of the plurality of electromagnets.

7. The substrate processing apparatus according to claim 1 , wherein the electromagnets of the peripheral region group each include an opposite pole facing away from the processing space, and wherein the electromagnets of the outer side group each include an opposite pole facing away from the processing space, and
wherein the controller is configured to simultaneously change a polarity of the processing space side magnetic poles of the central region group, peripheral region group, and the outer side group.

8. The substrate processing apparatus of claim 1 , wherein the controller is configured to simultaneously reverse a polarity of electromagnets of the central portion group, the peripheral region group, and the outer side group.

9. The substrate processing apparatus of claim 1 , wherein a distance between a center of the upper electrode and each center of said at least one electromagnet included in the central portion group is equal to or smaller than 74 mm,
wherein a distance between the center of the upper electrode and each center of the electromagnets included in the peripheral region group is greater than 75 mm and smaller than 148 mm, and
wherein a distance between the center of the upper electrode and each center of the electromagnets included in the outer side group is about 190 mm.

10. The substrate processing apparatus of claim 1 , wherein the yoke of each electromagnet in the central portion group, the peripheral region group, and the outer side group are oriented in a same direction.

Assignees

• Tokyo Electron Ltd

Inventors

• Nagaseki Kazuya
• Ito Etsuji
• Yokota Akihiro
• Himori Shinji
• Matsuyama Shoichiro

Classifications

• H10P50/267

  using plasmas · CPC title

• H10P95/70

  Chemical treatments · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/20 Primary

  Dry etching; Plasma etching; Reactive-ion etching · CPC title

• H01J37/3452

  Magnet distribution · CPC title