Semiconductor device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-2016336433-A1
Application number	US-201615223002-A
Country	US
Kind code	A1
Filing date	Jul 29, 2016
Priority date	Oct 22, 2013
Publication date	Nov 17, 2016
Grant date	—

Abstract

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

First claim

1 . A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor; performing a first heat treatment after forming the first transistor; forming a first insulating film over the first transistor; performing a second heat treatment after forming the first insulating film; forming a first barrier film over the first insulating film after performing the second heat treatment; forming a second insulating film over the first barrier film; forming an opening in the second insulating film, the first barrier film, and the first insulating film; and forming a second transistor comprising an oxide semiconductor film comprising a channel formation region, the second transistor being over the second insulating film and electrically connected to the first transistor through the opening.

2 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein a temperature of the second heat treatment is higher than that of the first heat treatment.

3 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first transistor is formed by using a semiconductor substrate.

4 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second heat treatment is performed for less than or equal to 10 hours at a temperature higher than or equal to 450° C. and lower than 650° C.

5 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first barrier film is loaned by a DC sputtering method.

6 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein a second barrier film is formed over the second transistor.

7 . The method for manufacturing a semiconductor device, according to claim 6 ,
wherein the second barrier film is formed by a DC sputtering method.

8 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein after the first transistor is formed, a third insulating film containing hydrogen is formed before the first heat treatment.

9 . A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor; performing a first heat treatment after forming the first transistor; forming a first insulating film over the first transistor; forming a first barrier film over the first insulating film; forming a second insulating film over the first barrier film; forming an opening in the second insulating film, the first barrier film, and the first insulating film; performing a second heat treatment after forming the opening; and forming a second transistor comprising an oxide semiconductor film comprising a channel formation region, the second transistor being over the second insulating film and electrically connected to the first transistor through the opening.

10 . The method for manufacturing a semiconductor device, according to claim 9 ,
wherein a temperature of the second heat treatment is higher than that of the first heat treatment.

11 . The method for manufacturing a semiconductor device, according to claim 9 ,
wherein the first transistor is formed by using a semiconductor substrate.

12 . The method for manufacturing a semiconductor device, according to claim 9 wherein the second heat treatment is performed for less than or equal to 10 hours at a temperature higher than or equal to 450° C. and lower than 650° C.

13 . The method for manufacturing a semiconductor device, according to claim 9 ,
wherein the first barrier film is formed by a DC sputtering method.

14 . The method for manufacturing a semiconductor device, according to claim 9 ,
wherein a second barrier film is formed over the second transistor.

15 . The method for manufacturing a semiconductor device, according to claim 14 ,
wherein the second barrier film is formed by a DC sputtering method.

16 . The method for manufacturing a semiconductor device, according to claim 9 ,
wherein after the first transistor is formed, a third insulating film containing hydrogen is formed before the first heat treatment.

Assignees

• Semiconductor Energy Lab

Inventors

• Ando Yoshinori
• Miyairi Hidekazu
• Yamade Naoto
• Higa Asako
• Suzuki Miki
• Ieda Yoshinori
• Suzuki Yasutaka
• Nei Kosei
• Yamazaki Shunpei

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title