Method and apparatus for depositing a material

Patent metadata

Field	Value
Publication number	US-2016289815-A1
Application number	US-201615084574-A
Country	US
Kind code	A1
Filing date	Mar 30, 2016
Priority date	Mar 31, 2015
Publication date	Oct 6, 2016
Grant date	—

Abstract

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

First claim

What is claimed is:

1 . A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;
in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

2 . A method according to claim 1 in which the substrate has a width which is 150 mm or greater.

3 . A method according to claim 1 in which the target has a width, the substrate has a width, and the width of the target is greater than the width of the substrate.

4 . A method according to claim 1 in which the secondary magnetic field is created using an electromagnet.

5 . A method according to claim 4 in which the secondary magnetic field is created by applying a DC electrical current to a coil which is disposed around the periphery of the chamber.

6 . A method according to claim 4 in which the electromagnet is a single electromagnet or a series of electromagnets having aligned polarities so that all of the electromagnets cause the plasma produced by the magnetron device to expand towards one or more walls of the chamber.

7 . A method according to claim 1 in which the secondary magnetic field is produced so as to provide an increased thickness of the deposited dielectric material in a peripheral portion of the substrate.

8 . A method according to claim 1 in which the secondary magnetic field causes ions to be steered away from a peripheral portion of the substrate.

9 . A method according to claim 8 in which Ar + ions are steered away from the peripheral portion of the substrate.

10 . A method according to claim 8 in which the secondary magnetic field attracts electrons towards one or more walls of the chamber to produce a drift electric field which steers ions away from a peripheral portion of the substrate.

11 . A method according to claim 1 in which the secondary magnetic field extends generally axially in the chamber in a region between the walls of the chamber and the substrate.

12 . A method according to claim 1 in which AIN is deposited.

13 . A method according to claim 1 in which a negative bias potential is applied to a substrate support on which the substrate is disposed.

14 . A method according to claim 1 in which the substrate is a semiconductor substrate such as a silicon substrate.

15 . A PVD apparatus for depositing a dielectric material on to a substrate by pulsed DC magnetron sputtering comprising:
a chamber; a pulsed DC magnetron device which produces one or more primary magnetic fields, the pulsed DC magnetron device comprising a target from which a sputtering material can be sputtered; a substrate support disposed in the chamber; a secondary magnetic field production device which is configured so that, in-use, the target and the substrate are separated by a gap in the range 2.5 to 10 cm; and a controller configured to control the secondary magnetic field production device so that a secondary magnetic field is produced within the chamber while the dielectric material is being deposited which steers electrons towards one or more walls of the chamber to produce a drift electric field which steers ions away from a peripheral portion of the substrate.

16 . An apparatus according to claim 15 in which the substrate support is configured to support a substrate having a width which is 150 mm or greater.

17 . An apparatus according to claim 15 in which the target has a width, the substrate support is configured to support a substrate having a width, and the width of the target is greater than the width of the substrate.

18 . An apparatus according to claim 15 in which the secondary magnetic field production device is an electromagnet.

19 . An apparatus according to claim 18 in which the electromagnet is a single electromagnet or a series of electromagnets having aligned polarities so that all of the electromagnets produce magnetic fields which steer electrons towards one or more walls of the chamber to produce a drift electric field which steers ions away from a peripheral portion of the substrate.

20 . An apparatus according to claim 15 in which the secondary magnetic field production device comprises a coil disposed around the periphery of the chamber and an electrical supply for applying DC electrical current to the coil.

21 . An apparatus according to claim 15 further comprising the substrate.

22 . A method of manufacturing a bulk acoustic wave device which comprises depositing a dielectric material on to a substrate using a method according to claim 1 .

Assignees

• Spts Technologies Ltd

Inventors

• Burgess Stephen R
• Hyndman Rhonda
• Rastogi Amit
• Lima Eduardo Paulo
• Widdicks Clive L
• Rich Paul
• Haymore Scott
• Cook Daniel

Classifications

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• C23C14/0617 Primary

  AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi · CPC title

• H01J37/3461

  Means for shaping the magnetic field, e.g. magnetic shunts · CPC title