Device for emitting and detecting photons and method of producing the same

Patent metadata

Field	Value
Publication number	US-2018190854-A1
Application number	US-201615736967-A
Country	US
Kind code	A1
Filing date	May 18, 2016
Priority date	Jun 24, 2015
Publication date	Jul 5, 2018
Grant date	—

Abstract

A single device for emitting and detecting photons. The device comprises a semiconductive layer ( 3 ), active material ( 5 ), further dielectric layer ( 17 ) and overlying electrode ( 25 ). In a first mode of operation an electrical field is applied between the semiconductive layer ( 3 ) and the overlying electrode ( 25 ). This enables photons to be emitted from the active material ( 5 ). In a second mode of operation, the semiconductive layer ( 3 ) constitutes a channel of a field effect transistor ( 23 ). The field effect transistor further comprises source electrode ( 11 ), drain electrode ( 15 ), gate electrode ( 13 ) and dielectric layer ( 19 ). Photons absorbed by the active material ( 5 ) causes charge to be transferred to the semiconductive layer ( 3 ), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.

First claim

1 - 15 . (canceled)

16 . An apparatus comprising:
a material positioned between a semiconductive layer and a conductive layer; wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and wherein the semiconductive layer and the conductive layer are configured such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.

17 . An apparatus as claimed in claim 16 wherein in the first mode of operation an electric field is applied between the semiconductive layer and the conductive layer.

18 . An apparatus as claimed in claim 16 wherein the semiconductive layer is connected to a source electrode and a drain electrode such that in the second mode of operation the semiconductive layer provides a channel within a field effect transistor.

19 . An apparatus as claimed in claim 16 wherein the semiconductive layer and the conductive layer are arranged such that the apparatus can be configured in the first mode of operation at a first time and in the second mode of operation at a second, different time.

20 . An apparatus as claimed in claim 16 wherein the material comprises quantum dots.

21 . An apparatus as claimed in claim 16 wherein a dielectric layer is provided between the material and the conductive layer.

22 . An apparatus as claimed in claim 16 wherein a hole transport layer is provided between the material and the semiconductive layer.

23 . An apparatus as claimed in claim 16 wherein an electron transport layer is provided between the material and the conductive layer.

24 . An apparatus as claimed in claim 16 comprising at least one of a barrier, a microlens array or fibre optic faceplate configured to prevent illumination from an adjacent apparatus.

25 . An apparatus as claimed in claim 16 comprising control circuitry configured to control the mode of operation of the apparatus.

26 . An array comprising a plurality of apparatus, at least one of the plurality of apparatus respectively comprising:
a material positioned between a semiconductive layer and a conductive layer; wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and wherein the semiconductive layer and the conductive layer are configured such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.

27 . An array as claimed in claim 26 wherein a first subset of one or more of the plurality of apparatus are configured in the first mode of operation and a second subset of one or more of the plurality of apparatus are configured in the second mode of operation.

28 . An array as claimed in claim 27 wherein at least one apparatus can be arranged within different subsets at different times.

29 . A method comprising:
providing a material between a semiconductive layer and a conductive layer; wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and configuring the semiconductive layer and the conductive layer such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.

30 . A method as claimed in claim 29 , wherein in the first mode of operation an electric field is applied between the semiconductive layer and the conductive layer.

31 . A method as claimed in claim 29 , wherein the semiconductive layer is connected to a source electrode and a drain electrode such that in the second mode of operation the semiconductive layer provides a channel within a field effect transistor.

32 . A method as claimed in claim 29 , further comprising configuring the material in the first mode of operation at a first time and in the second mode of operation at a second, different time.

33 . A method as claimed in claim 29 , wherein the material comprises quantum dots.

34 . A method as claimed in claim 29 , further comprising providing a dielectric layer between the material and the conductive layer.

35 . A method as claimed in claim 29 , further comprising providing a hole transport layer between the material and the semiconductive layer.

Assignees

• Nokia Technologies Oy

Inventors

• Bower Chris
• Andrew Piers
• White Richard

Classifications

• G16H30/40

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