Light-emitting device and light-emitting apparatus

Patent metadata

Field	Value
Publication number	US-9515239-B2
Application number	US-201514618591-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Feb 28, 2014
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/D int (min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship:

0.8 D int (min)<λ a /n wav-a

where D int (min) is the minimum center-to-center distance between adjacent projections or recesses, λ a is the wavelength of the first light in air, and n wav-a is the refractive index of the photoluminescent layer for the first light.

First claim

What is claimed is:

1. A light-emitting device comprising:
a photoluminescent layer extending parallel to a first plane, the photoluminescent layer emitting first light having a wavelength λ a in air, and having a refractive index n wav-a for the first light; and
a light-transmissive layer, on the photoluminescent layer, extending parallel to the first plane, the light-transmissive layer transmitting the first light, wherein
at least one of the photoluminescent layer and the light-transmissive layer includes a submicron structure comprising projections or recesses arranged parallel to the first plane,
at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface parallel to the first plane, the first light being emitted from the light emitting surface,
the submicron structure includes at least first directly adjacent two of the projections or the recesses, centers of which are separated from each other by a minimum distance D int (min) and second directly adjacent two of the projections or the recesses, centers of which are separated from each other by a distance greater than the minimum distance D int (min), and
the submicron structure satisfies 0.8D int (min)<λ a /n wav-a and λ a <3D int (min).

2. A light-emitting apparatus comprising:
the light-emitting device according to claim 1 ; and
a light source that directs excitation light into the light-emitting device.

3. The light-emitting device according to claim 1 , wherein 380 nm≦λ a ≦780 nm is satisfied.

4. The light-emitting device according to claim 1 , wherein the photoluminescent layer includes a phosphor.

5. A light-emitting device comprising:
a photoluminescent layer extending parallel to a first plane, the photoluminescent layer emitting first light having a wavelength λa in air, and having a refractive index n wav-a for the first light; and
a light-transmissive layer, on the photoluminescent layer, extending parallel to the first plane, the light-transmissive layer transmitting the first light, and having a refractive index higher than the refractive index n wav-a of the photoluminescent layer, wherein
the light-transmissive layer includes a submicron structure comprising projections or recesses arranged parallel to the first plane,
a distribution of intensity in spatial frequency domain determined by two-dimensional Fourier transform of a pattern of height of the projections or recesses takes a maximum value at a spatial frequency corresponding to a period P max ,
the submicron structure satisfies λ a /n wav-a <P max <λ a ,
at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface parallel to the first plane, the first light being emitted from the light emitting surface, and
a distance between the submicron structure and the photoluminescent layer is more than λ a /2.

6. The light-emitting device according to claim 5 , wherein 380 nm≦λ a ≦780 nm is satisfied.

7. The light-emitting device according to claim 5 , wherein the photoluminescent layer includes a phosphor.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Inada Yasuhisa
• Hirasawa Taku
• Nakamura Yoshitaka
• Hashiya Akira
• Nitta Mitsuru
• Yamaki Takeyuki

Classifications

• H01L31/02322

  Electricity · mapped topic

• H01L2027/11853

  Electricity · mapped topic

• H01L31/12

  Electricity · mapped topic

• H01L33/00

  Electricity · mapped topic

• H01L33/505

  Electricity · mapped topic